Inventor · disambiguated record
Hidetoshi Nozaki
Also filed as: NOZAKI HIDETOSHI
49 granted patents·5 pending applications·1,923 citations·filing 1983–2013
99Inventor score
Top patents by PatentIndex Score
54 records- 0199US7741666B2Backside illuminated imaging sensor with backside P+ doped layerOMNIVISION TECH INC·Filed 2008·Granted Jun 22, 2010·95 cites·25 claims
- 0298US5527417APhoto-assisted CVD apparatusTOSHIBA KK·Filed 1995·Granted Jun 18, 1996·807 cites·12 claims
- 0396US8507964B2Image sensor having waveguides formed in color filtersNOZAKI HIDETOSHI·Filed 2012·Granted Aug 13, 2013·17 cites·17 claims
- 0495US8228411B2Circuit and photo sensor overlap for backside illumination image sensorDAI TIEJUN·Filed 2011·Granted Jul 24, 2012·21 cites·9 claims
- 0594US6690423B1Solid-state image pickup apparatusTOSHIBA KK·Filed 1999·Granted Feb 10, 2004·142 cites·21 claims
- 0694US6570222B2Solid state imaging device having a photodiode and a MOSFETTOSHIBA KK·Filed 2001·Granted May 27, 2003·69 cites·61 claims
- 0793US8357984B2Image sensor with low electrical cross-talkOMNIVISION TECH INC·Filed 2008·Granted Jan 22, 2013·19 cites·18 claims
- 0893US7982177B2Frontside illuminated image sensor comprising a complex-shaped reflectorOMNIVISION TECH INC·Filed 2008·Granted Jul 19, 2011·20 cites·11 claims
- 0993US4677289AColor sensorTOSHIBA KK·Filed 1985·Granted Jun 30, 1987·125 cites·17 claims
- 1092US7825444B2Image sensor pixel having a lateral doping profile formed with indium dopingOMNIVISION TECH INC·Filed 2010·Granted Nov 2, 2010·7 cites·14 claims
- 1191US8101978B2Circuit and photo sensor overlap for backside illumination image sensorDAI TIEJUN·Filed 2008·Granted Jan 24, 2012·13 cites·9 claims
- 1289US6211509B1Solid-state image sensorTOSHIBA KK·Filed 1999·Granted Apr 3, 2001·98 cites·24 claims
- 1388US8487350B2Entrenched transfer gateNOZAKI HIDETOSHI·Filed 2010·Granted Jul 16, 2013·9 cites·8 claims
- 1488US6521925B1Solid-state image sensorTOSHIBA KK·Filed 2000·Granted Feb 18, 2003·52 cites·20 claims
- 1587US8269264B2Image sensor having waveguides formed in color filtersNOZAKI HIDETOSHI·Filed 2009·Granted Sep 18, 2012·8 cites·31 claims
- 1687US6642087B2Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Nov 4, 2003·36 cites·12 claims
- 1786US8008695B2Image sensor with backside passivation and metal layerOMNIVISION TECH INC·Filed 2008·Granted Aug 30, 2011·7 cites·23 claims
- 1886US7666703B2Image sensor pixel having a lateral doping profile formed with indium dopingOMNIVISION TECH INC·Filed 2005·Granted Feb 23, 2010·7 cites·10 claims
- 1986US7224003B2Solid-state image pickup apparatusTOSHIBA KK·Filed 2006·Granted May 29, 2007·8 cites·9 claims
- 2086US7154137B2Image sensor and pixel having a non-convex photodiodeOMNIVISION TECH INC·Filed 2004·Granted Dec 26, 2006·38 cites·17 claims
- 2185US8389921B2Image sensor having array of pixels and metal reflectors with widths scaled based on distance from center of the arrayNOZAKI HIDETOSHI·Filed 2010·Granted Mar 5, 2013·4 cites·19 claims
- 2285US7161130B2Low voltage active CMOS pixel on an N-type substrate with complete resetOMNIVISION TECH INC·Filed 2006·Granted Jan 9, 2007·7 cites·4 claims
- 2384US7045754B2Hybrid charge coupled CMOS image sensor having an amplification transistor controlled by a sense nodeOMNIVISION TECH INC·Filed 2004·Granted May 16, 2006·23 cites·23 claims
- 2483US7825966B2High dynamic range sensor with blooming drainOMNIVISION TECH INC·Filed 2007·Granted Nov 2, 2010·12 cites·15 claims
- 2581US7482570B2Solid-state imaging deviceTOSHIBA KK·Filed 2007·Granted Jan 27, 2009·4 cites·22 claims
- 2681US7355158B2Solid-state imaging deviceTOSHIBA KK·Filed 2007·Granted Apr 8, 2008·4 cites·3 claims
- 2780US6072206ASolid state image sensorTOSHIBA KK·Filed 1999·Granted Jun 6, 2000·56 cites·10 claims
- 2879US7692134B2Variable transfer gate oxide thickness for image sensorOMNIVISION TECH INC·Filed 2008·Granted Apr 6, 2010·8 cites·16 claims
- 2979US7042061B2Solid-state image pickup apparatusTOSHIBA KK·Filed 2003·Granted May 9, 2006·20 cites·10 claims
- 3077US8232133B2Image sensor with backside passivation and metal layerRHODES HOWARD E·Filed 2011·Granted Jul 31, 2012·1 cites·9 claims
- 3176US7022965B2Low voltage active CMOS pixel on an N-type substrate with complete resetOMNIVISION TECH INC·Filed 2004·Granted Apr 4, 2006·11 cites·15 claims
- 3275US7948018B2Multilayer image sensor structure for reducing crosstalkOMNIVISION TECH INC·Filed 2008·Granted May 24, 2011·3 cites·11 claims
- 3374US9570507B2Entrenched transfer gateOMNIVISION TECH INC·Filed 2013·Granted Feb 14, 2017·2 cites·18 claims
- 3473US6344670B2Solid-state sensor and systemTOSHIBA KK·Filed 2001·Granted Feb 5, 2002·15 cites·12 claims
- 3571US8237832B2Image sensor with focusing interconnectionsNOZAKI HIDETOSHI·Filed 2008·Granted Aug 7, 2012·2 cites·18 claims
- 3669US7262396B2Solid-state imaging deviceTOSHIBA KK·Filed 2002·Granted Aug 28, 2007·10 cites·19 claims
- 3769US6271554B1Solid-state image sensor having a substrate with an impurity concentration gradientTOSHIBA KK·Filed 1998·Granted Aug 7, 2001·30 cites·6 claims
- 3866US6974943B2Active pixel cell using negative to positive voltage swing transfer transistorOMNIVISION TECH INC·Filed 2003·Granted Dec 13, 2005·11 cites·9 claims
- 3965US8766391B2Photodetector array having array of discrete electron repulsive elementsNOZAKI HIDETOSHI·Filed 2012·Granted Jul 1, 2014·0 cites·10 claims
- 4064US6441411B2Solid-state image sensor having a substrate with an impurity concentration gradientTOSHIBA KK·Filed 2000·Granted Aug 27, 2002·9 cites·8 claims
- 4163US8227884B2Photodetector array having array of discrete electron repulsive elementsNOZAKI HIDETOSHI·Filed 2009·Granted Jul 24, 2012·0 cites·19 claims
- 4256US7145122B2Imaging sensor using asymmetric transfer transistorOMNIVISION TECH INC·Filed 2004·Granted Dec 5, 2006·5 cites·30 claims
- 4355US4500744APhotovoltaic deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Feb 19, 1985·15 cites·15 claims
- 4453US2009302409A1Image sensor with multiple thickness anti-relfective coating layersOMNIVISION TECH INC·Filed 2008·Application pending·0 cites
- 4552US6194244B1Method of manufacturing a photodiode in a solid-state deviceTOSHIBA KK·Filed 1998·Granted Feb 27, 2001·14 cites·8 claims
- 4652US2009200580A1Image sensor and pixel including a deep photodetectorOMNIVISION TECH INC·Filed 2008·Application pending·0 cites
- 4751US5266816APolysilicon thin film semiconductor device containing nitrogenTOSHIBA KK·Filed 1992·Granted Nov 30, 1993·25 cites·17 claims
- 4851US2010314667A1Cmos pixel with dual-element transfer gateOMNIVISION TECH INC·Filed 2010·Application pending·0 cites
- 4950US2011032405A1Image sensor with transfer gate having multiple channel sub-regionsOMNIVISION TECH INC·Filed 2010·Application pending·0 cites
- 5048US5378541ASilicon thin film memberTOSHIBA KK·Filed 1992·Granted Jan 3, 1995·14 cites·12 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →