Inventor · disambiguated record
Xianfeng Zhou
Also filed as: ZHOU XIANFENG
28 granted patents·5 pending applications·257 citations·filing 2002–2024
96Inventor score
Files withMICRON TECHNOLOGY INC18CHINA PETROLEUM & CHEM CORP3ZHOU XIANFENG3ROUND ROCK RES LLC2CHINA PETROLEUM & CHEMICAL1
Top patents by PatentIndex Score
33 records- 0199US7755146B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesROUND ROCK RES LLC·Filed 2009·Granted Jul 13, 2010·123 cites·20 claims
- 0293US9799727B2Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capabilityMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 24, 2017·7 cites·6 claims
- 0391US7691722B2Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capabilityMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 6, 2010·14 cites·19 claims
- 0490US9349632B2Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capabilityMICRON TECHNOLOGY INC·Filed 2015·Granted May 24, 2016·5 cites·12 claims
- 0588US8102006B2Different gate oxides thicknesses for different transistors in an integrated circuitZHOU XIANFENG·Filed 2010·Granted Jan 24, 2012·10 cites·11 claims
- 0687US9181375B2Fluorescent potassium ion sensorsTIAN YANQING·Filed 2012·Granted Nov 10, 2015·11 cites·4 claims
- 0784US8053321B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesROUND ROCK RES LLC·Filed 2010·Granted Nov 8, 2011·4 cites·20 claims
- 0883US7939394B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2008·Granted May 10, 2011·9 cites·21 claims
- 0983US7354812B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 8, 2008·29 cites·13 claims
- 1079US7265012B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 4, 2007·4 cites·32 claims
- 1177US7790544B2Method of fabricating different gate oxides for different transistors in an integrated circuitMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 7, 2010·4 cites·20 claims
- 1276US6849492B2Method for forming standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 1, 2005·12 cites·21 claims
- 1375US11215404B2Heat transfer tube and cracking furnace using the sameCHINA PETROLEUM & CHEM CORP·Filed 2018·Granted Jan 4, 2022·1 cites·6 claims
- 1473US9359560B2Heat transfer tube and cracking furnace using the heat transfer tubeCHINA PETROLEUM & CHEMICAL·Filed 2013·Granted Jun 7, 2016·3 cites·12 claims
- 1573US7473615B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 6, 2009·4 cites·10 claims
- 1672US8952485B2Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capabilityZHOU XIANFENG·Filed 2010·Granted Feb 10, 2015·2 cites·23 claims
- 1771US8585890B2Tubular cracking furnaceWANG GUOQING·Filed 2008·Granted Nov 19, 2013·3 cites·22 claims
- 1868US10209011B2Heat transfer tube and cracking furnace using the sameCHINA PETROLEUM & CHEM CORP·Filed 2013·Granted Feb 19, 2019·1 cites·11 claims
- 1967US7781860B2Semiconductor constructions, and electronic systemsMICRON TECHNOLOGY INC·Filed 2008·Granted Aug 24, 2010·2 cites·25 claims
- 2065US7696579B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 13, 2010·1 cites·7 claims
- 2164US7439140B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 21, 2008·1 cites·25 claims
- 2264US7304353B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 4, 2007·1 cites·4 claims
- 2362US7189607B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 13, 2007·5 cites·20 claims
- 2461US8304307B2Method of fabricating different gate oxides for different transistors in an integrated circuitZHOU XIANFENG·Filed 2012·Granted Nov 6, 2012·1 cites·20 claims
- 2553US7413946B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 19, 2008·0 cites·30 claims
- 2653US2022105183A1Micro-nano structure formed by self-assembling organic small molecule compound and use thereofQINGDAO UNIV OF SCIENCE AND TECHNOLOGY·Filed 2019·Application pending·0 cites
- 2752US2024423696A1Surgical smoking knifeZHEJIANG SHUYOU INSTR EQUIPMENT CO LTD·Filed 2024·Application pending·0 cites
- 2851US8035189B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2010·Granted Oct 11, 2011·0 cites·9 claims
- 2948US9505677B2Steam cracking processesCHINA PETROLEUM & CHEM CORP·Filed 2013·Granted Nov 29, 2016·0 cites·19 claims
- 3047US2006043368A1Flash cell structures and methods of formationMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 3138US2006046402A1Flash cell structures and methods of formationMICRON TECHNOLOGY INC·Filed 2004·Application pending·0 cites
- 3237US2004151489A1Imaging system for producing double exposure composite images and application thereofFiled 2002·Application pending·0 cites
- 3331US9486555B2Polyhedral oligomeric silsesquioxane (poss)-based bioactive hybrid glass as a scaffold for hard tissue engineeringSAHAI NITA·Filed 2015·Granted Nov 8, 2016·0 cites·19 claims
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