Inventor · disambiguated record
Mohammad Amanullah
Also filed as: AMANULLAH MOHAMMAD
4 granted patents·5 citations·filing 2016–2017
63Inventor score
Files withTAIWAN SEMICONDUCTOR CO LTD4
Top patents by PatentIndex Score
4 records- 0172US9799742B1Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·5 claims
- 0271US9741825B1Method for manufacturing field effect transistor having widened trenchTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·10 claims
- 0362US9905690B1Field effect transistor having a multi-width electrode structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Feb 27, 2018·1 cites·8 claims
- 0448US9960244B2Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2017·Granted May 1, 2018·0 cites·3 claims
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