Inventor · disambiguated record
Jonathan Pabustan
Also filed as: PABUSTAN JONATHAN · PABUSTAN JONATHAN G
22 granted patents·148 citations·filing 2005–2015
95Inventor score
Files withMICRON TECHNOLOGY INC7SARIN VISHAL7SILICON STORAGE TECH INC3PABUSTAN JONATHAN2HOEI JUNG-SHENG1
Top patents by PatentIndex Score
22 records- 0195US7843725B2M+L bit read column architecture for M bit memory cellsMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 30, 2010·33 cites·25 claims
- 0294US8254180B2Methods of operating memories including characterizing memory cell signal linesHOEI JUNG-SHENG·Filed 2011·Granted Aug 28, 2012·20 cites·26 claims
- 0392US8023334B2Program window adjust for memory cell signal line delayMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 20, 2011·23 cites·20 claims
- 0487US7668013B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2008·Granted Feb 23, 2010·17 cites·8 claims
- 0584US7864589B2Mitigation of runaway programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted Jan 4, 2011·12 cites·22 claims
- 0683US8385121B2Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cellMICRON TECHNOLOGY INC·Filed 2010·Granted Feb 26, 2013·6 cites·35 claims
- 0778US8117375B2Memory device program window adjustmentSARIN VISHAL·Filed 2007·Granted Feb 14, 2012·6 cites·16 claims
- 0874US7835190B2Methods of erase verification for a flash memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 16, 2010·7 cites·24 claims
- 0973US8169832B2Methods of erase verification for a flash memory deviceSARIN VISHAL·Filed 2010·Granted May 1, 2012·4 cites·22 claims
- 1071US7239550B2Method of programming a non-volatile memory cellSILICON STORAGE TECH INC·Filed 2005·Granted Jul 3, 2007·8 cites·8 claims
- 1170US8243523B2Sensing operations in a memory devicePABUSTAN JONATHAN·Filed 2010·Granted Aug 14, 2012·3 cites·16 claims
- 1268US8223551B2Soft landing for desired program threshold voltageSARIN VISHAL·Filed 2009·Granted Jul 17, 2012·5 cites·27 claims
- 1366US8307152B2Memory device program window adjustmentSARIN VISHAL·Filed 2012·Granted Nov 6, 2012·1 cites·16 claims
- 1463US9423969B2Sensing operations in a memory deviceMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 23, 2016·1 cites·20 claims
- 1554US8713246B2Memory device program window adjustmentSARIN VISHAL·Filed 2012·Granted Apr 29, 2014·0 cites·20 claims
- 1654US7974136B2Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratioSILICON STORAGE TECH INC·Filed 2009·Granted Jul 5, 2011·2 cites·8 claims
- 1749US9123423B2Programming operations in a memory deviceMICRON TECHNOLGY INC·Filed 2013·Granted Sep 1, 2015·0 cites·20 claims
- 1847US8737127B2Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bitsMICRON TECHNOLOGY INC·Filed 2013·Granted May 27, 2014·0 cites·16 claims
- 1944US8773912B2Soft landing for desired program threshold voltageSARIN VISHAL·Filed 2012·Granted Jul 8, 2014·0 cites·26 claims
- 2044US8611156B2Sensing operations in a memory devicePABUSTAN JONATHAN·Filed 2012·Granted Dec 17, 2013·0 cites·20 claims
- 2144US8274835B2Mitigation of runaway programming of a memory deviceSARIN VISHAL·Filed 2010·Granted Sep 25, 2012·0 cites·20 claims
- 2231US7434092B2Semiconductor memory and method of storing configuration dataSILICON STORAGE TECHONOLOGY IN·Filed 2005·Granted Oct 7, 2008·0 cites·15 claims
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