Inventor · disambiguated record
Victor H. Vartanian
Also filed as: VARTANIAN VICTOR H
10 granted patents·181 citations·filing 2004–2009
88Inventor score
Files withFREESCALE SEMICONDUCTOR INC10
Top patents by PatentIndex Score
10 records- 0195US7018901B1Method for forming a semiconductor device having a strained channel and a heterojunction source/drainFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·105 cites·24 claims
- 0287US7265004B2Electronic devices including a semiconductor layer and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·15 cites·14 claims
- 0387US7067868B2Double gate device having a heterojunction source/drain and strained channelFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·39 cites·17 claims
- 0483US7821067B2Electronic devices including a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 26, 2010·11 cites·20 claims
- 0575US7659156B2Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 9, 2010·5 cites·19 claims
- 0666US7700420B2Integrated circuit with different channel materials for P and N channel transistors and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·3 cites·9 claims
- 0766US7468313B2Engineering strain in thick strained-SOI substratesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 23, 2008·2 cites·20 claims
- 0859US7911002B2Semiconductor device with selectively modulated gate work functionFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·1 cites·19 claims
- 0947US7217667B2Processes for forming electronic devices including a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 15, 2007·0 cites·9 claims
- 1042US7560318B2Process for forming an electronic device including semiconductor layers having different stressesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jul 14, 2009·0 cites·20 claims
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