Inventor · disambiguated record
Olof Kordina
Also filed as: KORDINA OLOF · KORDINA OLOF C E · KORDINA OLOF CLAES ERIK
8 granted patents·8 pending applications·36 citations·filing 2003–2024
82Inventor score
Top patents by PatentIndex Score
16 records- 0182US8430965B2Epitaxial growth system for fast heating and coolingKORDINA OLOF CLAES ERIK·Filed 2008·Granted Apr 30, 2013·11 cites·7 claims
- 0278US7695565B2Sublimation chamber for phase controlled sublimationCREE INC·Filed 2006·Granted Apr 13, 2010·3 cites·16 claims
- 0368US7247513B2Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbideCARACAL INC·Filed 2003·Granted Jul 24, 2007·16 cites·44 claims
- 0468US2024304715A1A heterostructure for a high electron mobility transistor and a method of producing the sameSWEGAN AB·Filed 2024·Application pending·0 cites
- 0563US7147713B2Phase controlled sublimationCREE INC·Filed 2003·Granted Dec 12, 2006·5 cites·30 claims
- 0660US8197596B2Crystal growth method and reactor designKORDINA OLOF CLAES ERIK·Filed 2007·Granted Jun 12, 2012·1 cites·51 claims
- 0753US2025389484A1Device and method for treating a substrateAIXTRON SE·Filed 2023·Application pending·0 cites
- 0851US2016133461A1Method to grow a semi-conducting sic layerJANZÉN ERIK·Filed 2014·Application pending·0 cites
- 0948US10017877B2Silicon carbide crystal growth in a CVD reactor using chlorinated chemistryEPILUVAC AB·Filed 2013·Granted Jul 10, 2018·0 cites·13 claims
- 1048US2018053649A1Method to grow a semi-conducting sic layerSWEGAN AB·Filed 2017·Application pending·0 cites
- 1146US12002881B2Heterostructure for a high electron mobility transistor and a method of producing the sameSWEGAN AB·Filed 2017·Granted Jun 4, 2024·0 cites·14 claims
- 1245US8568531B2Seed holder for crystal growth reactorsKORDINA OLOF CLAES ERIK·Filed 2007·Granted Oct 29, 2013·0 cites·35 claims
- 1342US2022307138A1Reactor for gas treatment of a substrateSWEGAN AB·Filed 2019·Application pending·0 cites
- 1438US2005000452A1Electromagnetic rotation of platterFiled 2004·Application pending·0 cites
- 1538US2007169687A1Silicon carbide formation by alternating pulsesCARACAL INC·Filed 2006·Application pending·0 cites
- 1631US2006006394A1Silicon carbide Schottky diodes and fabrication methodCARACAL INC·Filed 2005·Application pending·0 cites
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