Inventor · disambiguated record
Jochen Beintner
Also filed as: BEINTNER JOCHEN · BEINTNER JOCHEN C
68 granted patents·2 pending applications·1,671 citations·filing 1997–2019
99Inventor score
Top patents by PatentIndex Score
70 records- 0199US7470570B2Process for fabrication of FinFETsIBM·Filed 2006·Granted Dec 30, 2008·138 cites·14 claims
- 0298US7683428B2Vertical Fin-FET MOS devicesIBM·Filed 2004·Granted Mar 23, 2010·221 cites·21 claims
- 0397US7410844B2Device fabrication by anisotropic wet etchIBM·Filed 2006·Granted Aug 12, 2008·53 cites·1 claims
- 0494US7018551B2Pull-back method of forming fins in FinFetsIBM·Filed 2003·Granted Mar 28, 2006·84 cites·26 claims
- 0594US6177698B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jan 23, 2001·144 cites·10 claims
- 0692US7323374B2Dense chevron finFET and method of manufacturing sameIBM·Filed 2005·Granted Jan 29, 2008·22 cites·21 claims
- 0792US7091566B2Dual gate FinFetIBM·Filed 2003·Granted Aug 15, 2006·69 cites·31 claims
- 0891US6998666B2Nitrided STI liner oxide for reduced corner device impact on vertical device performanceIBM·Filed 2004·Granted Feb 14, 2006·46 cites·14 claims
- 0989US6924178B2Oxide/nitride stacked in FinFET spacer processIBM·Filed 2003·Granted Aug 2, 2005·49 cites·24 claims
- 1088US7087471B2Locally thinned finsIBM·Filed 2004·Granted Aug 8, 2006·43 cites·20 claims
- 1188US6967147B1Nitrogen implantation using a shadow effect to control gate oxide thickness in DRAM semiconductorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 22, 2005·37 cites·4 claims
- 1288US6607984B1Removable inorganic anti-reflection coating processIBM·Filed 2000·Granted Aug 19, 2003·42 cites·22 claims
- 1386US7737502B2Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drainIBM·Filed 2006·Granted Jun 15, 2010·12 cites·10 claims
- 1485US7346887B2Method for fabricating integrated circuit featuresIBM·Filed 2005·Granted Mar 18, 2008·7 cites·28 claims
- 1585US6566228B1Trench isolation processes using polysilicon-assisted fillIBM·Filed 2002·Granted May 20, 2003·40 cites·20 claims
- 1685US6265742B1Memory cell structure and fabricationSIEMENS AG·Filed 1999·Granted Jul 24, 2001·51 cites·12 claims
- 1784US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 1882US7087952B2Dual function FinFET, finmemory and method of manufactureIBM·Filed 2004·Granted Aug 8, 2006·27 cites·20 claims
- 1979US7087532B2Formation of controlled sublithographic structuresIBM·Filed 2004·Granted Aug 8, 2006·22 cites·20 claims
- 2079US6602745B2Field effect transistor and method of fabricationINFINEON TECHNOLOGIES CORP·Filed 2002·Granted Aug 5, 2003·23 cites·18 claims
- 2178US6093614AMemory cell structure and fabricationSIEMENS AG·Filed 1998·Granted Jul 25, 2000·38 cites·7 claims
- 2277US7666741B2Corner clipping for field effect devicesIBM·Filed 2006·Granted Feb 23, 2010·5 cites·12 claims
- 2377US7348641B2Structure and method of making double-gated self-aligned finFET having gates of different lengthsIBM·Filed 2004·Granted Mar 25, 2008·18 cites·16 claims
- 2477US6677205B2Integrated spacer for gate/source/drain isolation in a vertical array structureINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 13, 2004·22 cites·15 claims
- 2576US6933183B2Selfaligned source/drain FinFET process flowIBM·Filed 2003·Granted Aug 23, 2005·21 cites·13 claims
- 2675US7037794B2Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drainIBM·Filed 2004·Granted May 2, 2006·18 cites·9 claims
- 2774US6579759B1Formation of self-aligned buried strap connectorIBM·Filed 2002·Granted Jun 17, 2003·19 cites·10 claims
- 2873US7767562B2Method of implanting using a shadow effectQIMONDA AG·Filed 2005·Granted Aug 3, 2010·3 cites·29 claims
- 2973US7696539B2Device fabrication by anisotropic wet etchIBM·Filed 2008·Granted Apr 13, 2010·3 cites·8 claims
- 3073US6204140B1Dynamic random access memoryINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Mar 20, 2001·33 cites·7 claims
- 3172US6770526B2Silicon nitride island formation for increased capacitanceINFINEON TECHNOLOGIES CORP·Filed 2002·Granted Aug 3, 2004·16 cites·25 claims
- 3271US6323103B1Method for fabricating transistorsSIEMENS AG·Filed 1998·Granted Nov 27, 2001·39 cites·41 claims
- 3370US6620676B2Structure and methods for process integration in vertical DRAM cell fabricationIBM·Filed 2001·Granted Sep 16, 2003·14 cites·10 claims
- 3470US6184091B1Formation of controlled trench top isolation layers for vertical transistorsINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Feb 6, 2001·32 cites·19 claims
- 3569US7129564B2Structure and method of forming a notched gate field effect transistorIBM·Filed 2005·Granted Oct 31, 2006·2 cites·8 claims
- 3669US6853025B2Trench capacitor with buried strapINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 8, 2005·9 cites·13 claims
- 3768US6905976B2Structure and method of forming a notched gate field effect transistorIBM·Filed 2003·Granted Jun 14, 2005·9 cites·17 claims
- 3868US6667504B1Self-aligned buried strap process using doped HDP oxideIBM·Filed 2003·Granted Dec 23, 2003·11 cites·11 claims
- 3967US9816920B2Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor componentBOSCH GMBH ROBERT·Filed 2014·Granted Nov 14, 2017·1 cites·8 claims
- 4066US6933206B2Trench isolation employing a high aspect ratio trenchINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 23, 2005·12 cites·36 claims
- 4166US6790739B2Structure and methods for process integration in vertical DRAM cell fabricationIBM·Filed 2003·Granted Sep 14, 2004·11 cites·10 claims
- 4266US6548344B1Spacer formation process using oxide shieldINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 15, 2003·10 cites·21 claims
- 4366US6013937ABuffer layer for improving control of layer thicknessSIEMENS AG·Filed 1997·Granted Jan 11, 2000·32 cites·5 claims
- 4463US9632123B2Micromechanical electric field meter as a thunderstorm warning deviceBOSCH GMBH ROBERT·Filed 2013·Granted Apr 25, 2017·1 cites·17 claims
- 4563US6960514B2Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2004·Granted Nov 1, 2005·9 cites·12 claims
- 4663US6579768B2Field effect transistor and method of fabricationINFINEON TECHNOLOGIES CORP·Filed 2002·Granted Jun 17, 2003·9 cites·9 claims
- 4762US7157329B2Trench capacitor with buried strapINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 2, 2007·1 cites·14 claims
- 4862US6987042B2Method of forming a collar using selective SiGe/Amorphous Si EtchIBM·Filed 2003·Granted Jan 17, 2006·7 cites·13 claims
- 4961US6369419B1Self-aligned near surface strap for high density trench DRAMSIBM·Filed 2000·Granted Apr 9, 2002·6 cites·20 claims
- 5061US6143599AMethod for manufacturing memory cell with trench capacitorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Nov 7, 2000·18 cites·6 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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