Inventor · disambiguated record
Kensuke Okonogi
Also filed as: OKONOGI KENSUKE
26 granted patents·12 pending applications·403 citations·filing 1993–2014
96Inventor score
Top patents by PatentIndex Score
38 records- 0192US5773152ASOI substrate having a high heavy metal gettering effect for semiconductor deviceNEC CORP·Filed 1995·Granted Jun 30, 1998·132 cites·12 claims
- 0289US7846826B2Method of manufacturing a semiconductor device with multilayer sidewallELPIDA MEMORY INC·Filed 2008·Granted Dec 7, 2010·14 cites·10 claims
- 0377US6448157B1Fabrication process for a semiconductor deviceNEC CORP·Filed 2000·Granted Sep 10, 2002·32 cites·12 claims
- 0477US6323109B1Laminated SOI substrate and producing method thereofNEC CORP·Filed 1998·Granted Nov 27, 2001·50 cites·6 claims
- 0572US8704299B2Semiconductor device and manufacturing method thereofELPIDA MEMORY INC·Filed 2013·Granted Apr 22, 2014·3 cites·13 claims
- 0670US7338876B2Method for manufacturing a semiconductor deviceELPIDA MEMORY INC·Filed 2005·Granted Mar 4, 2008·3 cites·9 claims
- 0768US7666761B2Semiconductor device and manufacturing method thereofELPIDA MEMORY INC·Filed 2007·Granted Feb 23, 2010·2 cites·9 claims
- 0866US7151033B2Method for manufacturing a semiconductor device having a low junction leakage currentELPIDA MEMORY INC·Filed 2005·Granted Dec 19, 2006·2 cites·9 claims
- 0963US6004406ASilicon on insulating substrateNEC CORP·Filed 1995·Granted Dec 21, 1999·24 cites·2 claims
- 1062US9236387B2Semiconductor device and manufacturing method thereofPS4 LUXCO SARL·Filed 2014·Granted Jan 12, 2016·1 cites·13 claims
- 1160US5420064AMethod of manufacturing a dielectric isolation substrateNEC CORP·Filed 1994·Granted May 30, 1995·29 cites·3 claims
- 1257US5970366AMethod of removing metallic contaminants from simox substrateNEC CORP·Filed 1997·Granted Oct 19, 1999·21 cites·19 claims
- 1355US7129141B2Method for manufacturing a semiconductor device having a low junction leakage currentELPIDA MEMORY INC·Filed 2004·Granted Oct 31, 2006·4 cites·19 claims
- 1451US5529947ASemiconductor device with clad substrate and fabrication process thereforNEC CORP·Filed 1994·Granted Jun 25, 1996·19 cites·9 claims
- 1549US7186632B2Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysiliconELPIDA MEMORY INC·Filed 2003·Granted Mar 6, 2007·5 cites·14 claims
- 1648US5691231AMethod of manufacturing silicon on insulating substrateNEC CORP·Filed 1997·Granted Nov 25, 1997·13 cites·3 claims
- 1748US2009209079A1Method for manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2009·Application pending·0 cites
- 1846US5798294ASemiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the sameNEC CORP·Filed 1995·Granted Aug 25, 1998·11 cites·13 claims
- 1946US5374582ALaminated substrate for semiconductor device and manufacturing method thereofNEC CORP·Filed 1994·Granted Dec 20, 1994·16 cites·2 claims
- 2046US2005214973A1Semiconductor device and manufacturing method thereofOYU KIYONORI·Filed 2005·Application pending·0 cites
- 2145US7737505B2Semiconductor device and method of forming the sameELPIDA MEMORY INC·Filed 2007·Granted Jun 15, 2010·0 cites·18 claims
- 2245US2006084255A1Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 2344US2007092993A1Semiconductor device packaging for avoiding metal contaminationELPIDA MEMORY INC·Filed 2006·Application pending·0 cites
- 2443US7700431B2Method for manufacturing a semiconductor device having polysilicon plugsELPIDA MEMORY INC·Filed 2005·Granted Apr 20, 2010·0 cites·20 claims
- 2542US6057036ASemiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the sameNEC CORP·Filed 1993·Granted May 2, 2000·10 cites·10 claims
- 2642US5849102AMethod of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphereNEC CORP·Filed 1997·Granted Dec 15, 1998·9 cites·4 claims
- 2742US2008061339A1Semiconductor device having capacitance element, arranged close to mos transistor and having dielectric made of electrostrictive materialELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 2841US7632696B2Semiconductor chip with a porous single crystal layer and manufacturing method of the sameELPIDA MEMORY INC·Filed 2006·Granted Dec 15, 2009·0 cites·13 claims
- 2939US8674455B2Semiconductor deviceOKONOGI KENSUKE·Filed 2011·Granted Mar 18, 2014·0 cites·19 claims
- 3039US2006115936A1Method of manufacturing semiconductor device with reduced junction leakage current and gate electrode resistance of transistorELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 3139US2006223292A1Method of manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2006·Application pending·0 cites
- 3238US2005164438A1Method for manufacturing a semiconductor deviceELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 3334US2001046750A1Method for manufacturing semiconductor device having a STI structureFiled 2001·Application pending·0 cites
- 3433US5726089ASemiconductor device and method for fabricating the sameNEC CORP·Filed 1995·Granted Mar 10, 1998·3 cites·6 claims
- 3532US2012305999A1Semiconductor device and method of manufacturing the sameOKONOGI KENSUKE·Filed 2012·Application pending·0 cites
- 3632US2010302888A1Dynamic random access memory device and inspection method thereofELPIDA MEMORY INC·Filed 2010·Application pending·0 cites
- 3731US2002127819A1Semiconductor device and fabrication process thereforFiled 2002·Application pending·0 cites
- 3830US5872388ASemiconductor device and method for fabricating the sameNEC CORP·Filed 1998·Granted Feb 16, 1999·0 cites·3 claims
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