Inventor · disambiguated record
Masanobu Senda
Also filed as: SENDA MASANOBU
25 granted patents·1 pending application·753 citations·filing 1989–2007
97Inventor score
Files withTOYODA GOSEI KK26
Top patents by PatentIndex Score
26 records- 0196US6841808B2Group III nitride compound semiconductor device and method for producing the sameTOYODA GOSEI KK·Filed 2001·Granted Jan 11, 2005·124 cites·18 claims
- 0294US7128846B2Process for producing group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2003·Granted Oct 31, 2006·84 cites·20 claims
- 0390US6875629B2III group nitride based semiconductor element and method for manufacture thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 5, 2005·47 cites·11 claims
- 0490US6593016B1Group III nitride compound semiconductor device and producing method thereofTOYODA GOSEI KK·Filed 2000·Granted Jul 15, 2003·41 cites·6 claims
- 0589US6897139B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted May 24, 2005·47 cites·20 claims
- 0689US6713789B1Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2000·Granted Mar 30, 2004·42 cites·37 claims
- 0785US6956245B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2003·Granted Oct 18, 2005·42 cites·22 claims
- 0883US6531719B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Mar 11, 2003·35 cites·74 claims
- 0982US6623998B2Method for manufacturing group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Sep 23, 2003·32 cites·74 claims
- 1081US7981744B2Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growthTOYODA GOSEI KK·Filed 2005·Granted Jul 19, 2011·7 cites·3 claims
- 1181US6939733B2Group III nitride compound semiconductor device and method of producing the sameTOYODA GOSEI KK·Filed 2003·Granted Sep 6, 2005·20 cites·17 claims
- 1281US6830949B2Method for producing group-III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Dec 14, 2004·25 cites·16 claims
- 1377US7042012B2Semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2003·Granted May 9, 2006·28 cites·10 claims
- 1477US6925100B2Communication deviceTOYODA GOSEI KK·Filed 2003·Granted Aug 2, 2005·18 cites·5 claims
- 1576US5097358AElectrochromic elementTOYODA GOSEI KK·Filed 1990·Granted Mar 17, 1992·44 cites·8 claims
- 1674US7087930B2Semiconductor light emitting element and method of making sameTOYODA GOSEI KK·Filed 2004·Granted Aug 8, 2006·16 cites·20 claims
- 1773US7253450B2Light-emitting deviceTOYODA GOSEI KK·Filed 2004·Granted Aug 7, 2007·18 cites·7 claims
- 1871US5985451AElastic productTOYODA GOSEI KK·Filed 1997·Granted Nov 16, 1999·29 cites·11 claims
- 1957US6918961B2Group III nitride compound semiconductor device and producing method thereforTOYODA GOSEI KK·Filed 2003·Granted Jul 19, 2005·4 cites·14 claims
- 2056US6924515B2Semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2003·Granted Aug 2, 2005·6 cites·20 claims
- 2152US5590887ASealing apparatusTOYODA GOSEI KK·Filed 1993·Granted Jan 7, 1997·17 cites·2 claims
- 2250US5728328AMethod of molding a product having low gloss surfaceTOYODA GOSEI KK·Filed 1996·Granted Mar 17, 1998·13 cites·9 claims
- 2343US2007246736A1Light emitting element and communication device using sameTOYODA GOSEI KK·Filed 2007·Application pending·0 cites
- 2440US5173146APlasma treatment methodTOYODA GOSEI KK·Filed 1991·Granted Dec 22, 1992·8 cites·2 claims
- 2532US5015075AElectrochromic elementTOYODA GOSEI KK·Filed 1989·Granted May 14, 1991·3 cites·5 claims
- 2631US5064679APlasma treatment methodTOYODA GOSEI KK·Filed 1990·Granted Nov 12, 1991·3 cites·1 claims
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