Inventor · disambiguated record
Johannes Georg Laven
Also filed as: LAVEN JOHANNES · LAVEN JOHANNES GEORG
135 granted patents·5 pending applications·201 citations·filing 2012–2024
99Inventor score
Files withINFINEON TECHNOLOGIES AG130INFINEON TECHNOLOGIES AUSTRIA AG7INFINEON TECH DRESDEN GMBH & CO KG2SCHULZE HANS-JOACHIM1
Top patents by PatentIndex Score
140 records- 0195US9917186B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·9 cites·14 claims
- 0294US9024413B2Semiconductor device with IGBT cell and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 5, 2015·10 cites·8 claims
- 0393US9613805B1Method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 4, 2017·9 cites·22 claims
- 0493US9105679B2Semiconductor device and insulated gate bipolar transistor with barrier regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 11, 2015·17 cites·20 claims
- 0590US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
- 0690US9054035B2Increasing the doping efficiency during proton irradiationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 9, 2015·8 cites·7 claims
- 0789US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0889US9621133B2Method of operating a semiconductor device having an IGBT and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 11, 2017·4 cites·5 claims
- 0988US10153275B2Method of operating an IGBT having switchable and non-switchable diode cellsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 11, 2018·4 cites·20 claims
- 1088US9876100B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 1188US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 1287US9564495B2Semiconductor device with a semiconductor body containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 7, 2017·4 cites·7 claims
- 1387US9105487B2Super junction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 11, 2015·6 cites·18 claims
- 1486US10978560B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·3 cites·17 claims
- 1586US10475909B2Electric assembly including a bipolar switching device and a wide bandgap transistorINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·5 cites·22 claims
- 1686US9997602B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 12, 2018·4 cites·22 claims
- 1786US8710620B2Method of manufacturing semiconductor devices using ion implantationSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 29, 2014·6 cites·15 claims
- 1885US10109489B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 23, 2018·3 cites·26 claims
- 1985US9385228B2Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 5, 2016·5 cites·10 claims
- 2084US10461739B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 29, 2019·4 cites·20 claims
- 2184US9666663B2Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 30, 2017·5 cites·7 claims
- 2284US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
- 2383US11133380B2Diode structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 28, 2021·2 cites·13 claims
- 2482US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 2582US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 2682US10886909B2Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 5, 2021·3 cites·28 claims
- 2782US9515243B2Temperature sensorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 6, 2016·4 cites·31 claims
- 2882US9496351B2Semiconductor chip arrangementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 15, 2016·2 cites·17 claims
- 2982US2025081563A1Power Semiconductor Device with dV/dt Controllability and Low Gate ChargeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3081US11171230B2Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 9, 2021·2 cites·11 claims
- 3181US9093568B1Semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 28, 2015·5 cites·22 claims
- 3280US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 3380US10200028B2Electric assembly including a reverse conducting switching device and a rectifying deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·3 cites·20 claims
- 3479US9972704B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 15, 2018·2 cites·16 claims
- 3579US9576944B2Semiconductor devices with transistor cells and thermoresistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·4 cites·25 claims
- 3679US9536999B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 3, 2017·3 cites·14 claims
- 3778US10128328B2Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 13, 2018·2 cites·23 claims
- 3878US9825131B2Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 21, 2017·2 cites·17 claims
- 3977US12199146B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 14, 2025·0 cites·17 claims
- 4076US10333387B2Electric assembly including a semiconductor switching device and a clamping diodeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 25, 2019·2 cites·26 claims
- 4176US9691887B2Semiconductor device with variable resistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 4275US10651165B2Semiconductor device having overload current carrying capabilityINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 12, 2020·2 cites·11 claims
- 4375US10381467B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 13, 2019·1 cites·12 claims
- 4475US10096677B2Methods for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 9, 2018·2 cites·19 claims
- 4574US11121242B2Method of operating a semiconductor device having a desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 4674US10679855B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·1 cites·17 claims
- 4774US10529838B2Semiconductor device having a variable carbon concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
- 4874US10366895B2Methods for forming a semiconductor device using tilted reactive ion beamINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 30, 2019·1 cites·9 claims
- 4974US10192955B2Semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 29, 2019·1 cites·17 claims
- 5074US9935126B2Method of forming a semiconductor substrate with buried cavities and dielectric support structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 3, 2018·2 cites·15 claims
Showing the top 50 of 140 patent records by PatentIndex Score.
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