Inventor · disambiguated record
Yuri Terada
Also filed as: TERADA YURI
9 granted patents·2 pending applications·48 citations·filing 2009–2024
86Inventor score
Top patents by PatentIndex Score
11 records- 0190US10957404B2Memory device which generates operation voltages in parallel with reception of an addressTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 23, 2021·7 cites·18 claims
- 0290US8400815B2Nonvolatile semiconductor memory deviceTERADA YURI·Filed 2010·Granted Mar 19, 2013·18 cites·24 claims
- 0390US2025046384A1Memory device which generates operation voltages in parallel with reception of an addressKIOXIA CORP·Filed 2024·Application pending·0 cites
- 0482US11257551B2Memory device which generates operation voltages in parallel with reception of an addressTOSHIBA MEMORY CORP·Filed 2021·Granted Feb 22, 2022·1 cites·20 claims
- 0577US8493800B2Three dimensional semiconductor storage device having write drivers under a three dimensional memory cell arrayTERADA YURI·Filed 2011·Granted Jul 23, 2013·7 cites·10 claims
- 0677US7936586B2Nonvolatile semiconductor storage apparatus and data programming method thereofTOSHIBA KK·Filed 2009·Granted May 3, 2011·10 cites·20 claims
- 0776US12159677B2Memory device which generates operation voltages in parallel with reception of an addressKIOXIA CORP·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 0870US11705210B2Memory device which generates operation voltages in parallel with reception of an addressKIOXIA CORP·Filed 2022·Granted Jul 18, 2023·0 cites·18 claims
- 0965US10930357B2Semiconductor storage device having a temperature sensor that generates a temperature signal based on which applied voltages are generatedTOSHIBA MEMORY CORP·Filed 2019·Granted Feb 23, 2021·2 cites·8 claims
- 1065US8493770B2Non-volatile semiconductor storage device with concurrent read operationHOSONO KOJI·Filed 2010·Granted Jul 23, 2013·3 cites·19 claims
- 1132US2013128673A1Semiconductor memory deviceTERADA YURI·Filed 2012·Application pending·0 cites
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