Inventor · disambiguated record
Jeongchun Ryu
Also filed as: RYU JEONGCHUN
5 granted patents·8 pending applications·0 citations·filing 2022–2025
62Inventor score
Files withSAMSUNG ELECTRONICS CO LTD13
Top patents by PatentIndex Score
13 records- 0188US2025344609A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0283US2024387089A1Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0382US12310250B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 0482US2025261565A1Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0581US12382839B2Magnetic tunneling junction device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·31 claims
- 0678US12080459B2Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·36 claims
- 0763US2025169371A1Magnetic tunnel junction element and memory device including magnetic tunnel junction elementSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0861US12484456B2Spin orbit torque magnetic memory devices, operating methods thereof, and electronic apparatuses including the magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 0960US2024251685A1Magnetic memory devices using spin current and electronic apparatuses including the magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1058US2024321333A1Magnetic tunneling junction device capable of magnetic switching without external magnetic field and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1153US12295268B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1252US2025331426A1Magnetic memory device including a magnetic tunnel junctionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1347US2024365678A1Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →