Inventor · disambiguated record
Kazuhiro Komori
Also filed as: KOMORI KAZUHIRO
63 granted patents·1 pending application·2,367 citations·filing 1980–2019
99Inventor score
Files withHITACHI LTD44RENESAS TECH CORP9JAPAN SCIENCE & TECH AGENCY2KOMORI KAZUHIRO2NAT INST OF ADVANCED IND SCIEN2
Top patents by PatentIndex Score
64 records- 0199US6771538B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2003·Granted Aug 3, 2004·172 cites·10 claims
- 0299US6614684B1Semiconductor integrated circuit and nonvolatile memory elementHITACHI LTD·Filed 2000·Granted Sep 2, 2003·353 cites·26 claims
- 0397US4471373ASemiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETSHITACHI LTD·Filed 1981·Granted Sep 11, 1984·154 cites·8 claims
- 0496US4651406AForming memory transistors with varying gate oxide thicknessesHITACHI LTD·Filed 1986·Granted Mar 24, 1987·187 cites·6 claims
- 0595US4652897ASemiconductor memory deviceHITACHI LTD·Filed 1985·Granted Mar 24, 1987·106 cites·19 claims
- 0694US4663645ASemiconductor device of an LDD structure having a floating gateHITACHI LTD·Filed 1985·Granted May 5, 1987·95 cites·6 claims
- 0791US6451643B2Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETsHITACHI LTD·Filed 2001·Granted Sep 17, 2002·33 cites·10 claims
- 0890US7463517B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2007·Granted Dec 9, 2008·13 cites·4 claims
- 0990US7428167B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2006·Granted Sep 23, 2008·13 cites·4 claims
- 1090US4697198AMOSFET which reduces the short-channel effectHITACHI LTD·Filed 1985·Granted Sep 29, 1987·64 cites·18 claims
- 1189US5300802ASemiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1991·Granted Apr 5, 1994·43 cites·34 claims
- 1288US7289361B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2006·Granted Oct 30, 2007·12 cites·4 claims
- 1388US6545311B2Semiconductor integrated circuit and nonvolatile memory elementHITACHI LTD·Filed 2001·Granted Apr 8, 2003·29 cites·14 claims
- 1488US4373249AMethod of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 1980·Granted Feb 15, 1983·36 cites·7 claims
- 1587US7042764B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2005·Granted May 9, 2006·11 cites·4 claims
- 1687US6906954B2Semiconductor integrated circuit and nonvolatile memory elementRENESAS TECH CORP·Filed 2004·Granted Jun 14, 2005·24 cites·13 claims
- 1787US4996571ANon-volatile semiconductor memory device erasing operationHITACHI LTD·Filed 1989·Granted Feb 26, 1991·56 cites·4 claims
- 1886US5352620AMethod of making semiconductor device with memory cells and peripheral transistorsHITACHI LTD·Filed 1993·Granted Oct 4, 1994·69 cites·14 claims
- 1986US5153144AMethod of making tunnel EEPROMHITACHI LTD·Filed 1991·Granted Oct 6, 1992·65 cites·37 claims
- 2083US5904518AMethod of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cellsHITACHI LTD·Filed 1997·Granted May 18, 1999·28 cites·35 claims
- 2183US4972371ASemiconductor memory deviceHITACHI LTD·Filed 1988·Granted Nov 20, 1990·46 cites·56 claims
- 2281US6586807B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jul 1, 2003·26 cites·32 claims
- 2381US6528839B2Semiconductor integrated circuit and nonvolatile memory elementFiled 2001·Granted Mar 4, 2003·17 cites·36 claims
- 2481US5656522AMethod of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1995·Granted Aug 12, 1997·26 cites·33 claims
- 2581US5079603ASemiconductor memory deviceHITACHI LTD·Filed 1990·Granted Jan 7, 1992·53 cites·52 claims
- 2680US7440658B2Photonic crystal coupling defect waveguideJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Oct 21, 2008·16 cites·1 claims
- 2780US5155701ASemiconductor integrated circuit device and method of testing the sameHITACHI LTD·Filed 1990·Granted Oct 13, 1992·48 cites·8 claims
- 2879US11198784B2Resin compositionSUMITOMO CHEMICAL CO·Filed 2017·Granted Dec 14, 2021·1 cites·6 claims
- 2977US5427966AProcess for fabricating a semiconductor device having floating gate and control gate electrodesHITACHI LTD·Filed 1993·Granted Jun 27, 1995·49 cites·17 claims
- 3076US5656839ASemiconductor integrated circuit device having single-element type nonvolatile memory elementsHITACHI LTD·Filed 1995·Granted Aug 12, 1997·20 cites·27 claims
- 3175US5340760AMethod of manufacturing EEPROM memory deviceKOMORI KAZUHIRO·Filed 1992·Granted Aug 23, 1994·45 cites·26 claims
- 3275US4918501ASemiconductor device and method of producing the sameHITACHI LTD·Filed 1988·Granted Apr 17, 1990·32 cites·18 claims
- 3372US6974967B2Quantum logic gate and quantum logic operation method using excitonNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Dec 13, 2005·4 cites·7 claims
- 3472US5814543AMethod of manufacturing a semicondutor integrated circuit device having nonvolatile memory cellsHITACHI LTD·Filed 1995·Granted Sep 29, 1998·36 cites·19 claims
- 3571US5407853AMethod of making semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 1994·Granted Apr 18, 1995·15 cites·18 claims
- 3671US4451904ASemiconductor memory deviceHITACHI LTD·Filed 1981·Granted May 29, 1984·33 cites·6 claims
- 3770US6255690B1Non-volatile semiconductor memory deviceHITACHI LTD·Filed 1999·Granted Jul 3, 2001·14 cites·16 claims
- 3870US5194924ASemiconductor device of an LDD structure having a floating gateHITACHI LTD·Filed 1991·Granted Mar 16, 1993·31 cites·27 claims
- 3969US7071050B2Semiconductor integrated circuit device having single-element type non-volatile memory elementsHITACHI LTD·Filed 2005·Granted Jul 4, 2006·3 cites·12 claims
- 4069US5937118AQuantum synthesizer, THz electromagnetic wave generation device, optical modulation device, and electron wave modulation deviceAGENCY IND SCIENCE TECHN·Filed 1997·Granted Aug 10, 1999·27 cites·10 claims
- 4167US7652310B2Negative resistance field effect device and high-frequency oscillation deviceJAPAN SCIENCE & TECH AGENCY·Filed 2006·Granted Jan 26, 2010·4 cites·16 claims
- 4267US5629541ASemiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of dataHITACHI LTD·Filed 1995·Granted May 13, 1997·13 cites·20 claims
- 4366US5189497ASemiconductor memory deviceHITACHI LTD·Filed 1991·Granted Feb 23, 1993·26 cites·23 claims
- 4465US4872041ASemiconductor device equipped with a field effect transistor having a floating gateHITACHI LTD·Filed 1988·Granted Oct 3, 1989·24 cites·22 claims
- 4564US5098855ASemiconductor device and method of producing the sameHITACHI LTD·Filed 1990·Granted Mar 24, 1992·21 cites·45 claims
- 4664US4818716ASemiconductor device and manufacturing method thereofHITACHI LTD·Filed 1987·Granted Apr 4, 1989·19 cites·26 claims
- 4764US4784968AProcess for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrodeHITACHI LTD·Filed 1987·Granted Nov 15, 1988·20 cites·23 claims
- 4863US7399667B2Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elementsRENESAS TECH CORP·Filed 2006·Granted Jul 15, 2008·2 cites·9 claims
- 4963US5235200ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1990·Granted Aug 10, 1993·28 cites·2 claims
- 5061US5472891AMethod of manufacturing a semiconductor deviceHITACHI LTD·Filed 1994·Granted Dec 5, 1995·20 cites·6 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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