Inventor · disambiguated record
Jeng-Shyan Lin
Also filed as: LIN JENG S · LIN JENG-SHYAN
113 granted patents·6 pending applications·525 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD70TAIWAN SEMICONDUCTOR MFG24LIN JENG-SHYAN7TSAI SHUANG-JI5WANG WEN-DE4
Top patents by PatentIndex Score
119 records- 0199US11596800B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·6 cites·20 claims
- 0298US11694979B2Isolation structure for bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·4 cites·20 claims
- 0398US9666624B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·13 cites·20 claims
- 0498US8736006B1Backside structure for a BSI image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·31 cites·20 claims
- 0597US9142586B2Pad design for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 22, 2015·37 cites·20 claims
- 0697US9136298B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 15, 2015·15 cites·20 claims
- 0796US10991667B2Isolation structure for bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·9 cites·20 claims
- 0896US7507596B2Method of fabricating a high quantum efficiency photodiodeTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 24, 2009·40 cites·22 claims
- 0995US11011567B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·3 cites·20 claims
- 1095US9449914B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·21 cites·20 claims
- 1195US8531565B2Front side implanted guard ring structure for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 10, 2013·16 cites·20 claims
- 1294US10269768B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·9 cites·20 claims
- 1394US10153316B2Mechanisms for forming image sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
- 1494US9123615B2Vertically integrated image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·11 cites·20 claims
- 1594US9035445B2Seal ring structure with a metal padTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 19, 2015·14 cites·20 claims
- 1693US11342374B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 1793US11222915B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·7 cites·20 claims
- 1893US8941204B2Apparatus and method for reducing cross talk in image sensorsLIN JENG-SHYAN·Filed 2012·Granted Jan 27, 2015·10 cites·20 claims
- 1993US8435824B2Backside illumination sensor having a bonding pad structure and method of making the sameTSAI SHUANG-JI·Filed 2011·Granted May 7, 2013·18 cites·20 claims
- 2093US2025357399A1Isolation structure for bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2192US9224770B2Image sensor device and methodLIN JENG-SHYAN·Filed 2012·Granted Dec 29, 2015·7 cites·20 claims
- 2291US9287312B2Imaging sensor structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·7 cites·20 claims
- 2390US10672819B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·3 cites·20 claims
- 2490US9627430B2Method and apparatus for low resistance image sensor contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·3 cites·20 claims
- 2590US9543257B23DIC interconnect devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·11 cites·21 claims
- 2690US9455158B23DIC interconnect devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 27, 2016·10 cites·20 claims
- 2790US9041206B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·11 cites·20 claims
- 2890US2025344541A1Stacked substrate structure with inter-tier interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2989US9764153B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 19, 2017·7 cites·17 claims
- 3088US9059061B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·3 cites·20 claims
- 3188US8810700B2Front side implanted guard ring structure for backsideTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·4 cites·20 claims
- 3288US8604405B2Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the sameLIU HAN-CHI·Filed 2009·Granted Dec 10, 2013·13 cites·20 claims
- 3387US12424577B2Isolation structure for bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3487US9013022B2Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chipsLIN JENG-SHYAN·Filed 2011·Granted Apr 21, 2015·7 cites·21 claims
- 3587US8283754B2Seal ring structure with metal padLIN JENG-SHYAN·Filed 2010·Granted Oct 9, 2012·7 cites·15 claims
- 3686US10290671B2Image sensor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·3 cites·20 claims
- 3786US9184207B2Pad structures formed in double openings in dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Nov 10, 2015·2 cites·20 claims
- 3886US8338917B2Multiple seal ring structureYAUNG DUN-NIAN·Filed 2010·Granted Dec 25, 2012·10 cites·14 claims
- 3986US8227288B2Image sensor and method of fabricating sameWANG WEN-DE·Filed 2009·Granted Jul 24, 2012·7 cites·18 claims
- 4085US12482791B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 4185US9941249B2Multi-wafer stacking by Ox-Ox bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 4285US9455288B2Image sensor structure to reduce cross-talk and improve quantum efficiencyTSAI SHUANG-JI·Filed 2012·Granted Sep 27, 2016·4 cites·19 claims
- 4385US8952497B2Scribe lines in wafersCHEN U-TING·Filed 2012·Granted Feb 10, 2015·8 cites·20 claims
- 4485US7968424B2Method of implantationTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 28, 2011·11 cites·20 claims
- 4584US10163973B2Method for forming the front-side illuminated image sensor device structure with light pipeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 4684US9536777B2Interconnect apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 3, 2017·5 cites·15 claims
- 4783US12400984B2Isolation structure for bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 4883US10629568B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 21, 2020·2 cites·20 claims
- 4983US10192918B2Image sensor including dual isolation and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 29, 2019·3 cites·20 claims
- 5083US9812482B2Frontside illuminated (FSI) image sensor with a reflectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·20 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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