Inventor · disambiguated record
Clement Merckling
Also filed as: MERCKLING CLEMENT
19 granted patents·3 pending applications·27 citations·filing 2007–2023
91Inventor score
Top patents by PatentIndex Score
22 records- 0187US9947591B2Method for manufacturing a Si-based high-mobility CMOS device with stacked channel layers, and resulting devicesIMEC VZW·Filed 2016·Granted Apr 17, 2018·4 cites·12 claims
- 0287US9324818B2Gate-all-around semiconductor device and method of fabricating the sameIMEC VZW·Filed 2015·Granted Apr 26, 2016·5 cites·11 claims
- 0382US10872824B2Si-based high-mobility CMOS device with stacked channel layers and resulting devicesIMEC VZW·Filed 2019·Granted Dec 22, 2020·2 cites·5 claims
- 0480US9082616B2III-V device and method for manufacturing thereofIMEC·Filed 2014·Granted Jul 14, 2015·4 cites·19 claims
- 0578US10930750B2Method for forming a qubit deviceIMEC VZW·Filed 2018·Granted Feb 23, 2021·2 cites·14 claims
- 0675US9425314B2Passivated III-V or Ge fin-shaped field effect transistorIMEC·Filed 2014·Granted Aug 23, 2016·3 cites·19 claims
- 0770US8314017B2Method for manufacturing a low defect interface between a dielectric and a III-V compoundMERCKLING CLEMENT·Filed 2010·Granted Nov 20, 2012·3 cites·15 claims
- 0868US9601488B2Gate-all-around semiconductor device and method of fabricating the sameIMEC VZW·Filed 2016·Granted Mar 21, 2017·1 cites·20 claims
- 0965US9478611B2Vertical nanowire semiconductor structuresIMEC VZW·Filed 2015·Granted Oct 25, 2016·1 cites·15 claims
- 1060US11442297B2Perovskite oxides with a-axis orientationIMEC VZW·Filed 2019·Granted Sep 13, 2022·0 cites·15 claims
- 1160US8232581B2Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereofPOURTOIS GEOFFREY·Filed 2010·Granted Jul 31, 2012·2 cites·20 claims
- 1257US10256157B2Method for manufacturing a Si-based high-mobility CMOS device with stacked channel layers, and resulting devicesIMEC VZW·Filed 2017·Granted Apr 9, 2019·0 cites·12 claims
- 1349US8872238B2Method for manufacturing a low defect interface between a dielectric and a III-V compoundIMEC·Filed 2012·Granted Oct 28, 2014·0 cites·20 claims
- 1445US8994109B2High-K heterostructureMERCKLING CLEMENT·Filed 2013·Granted Mar 31, 2015·0 cites·13 claims
- 1544US8426261B2High-k heterostructureMERCKLING CLEMENT·Filed 2007·Granted Apr 23, 2013·0 cites·27 claims
- 1642US2025264740A1An integrated electro-optical absorption modulatorIMEC VZW·Filed 2023·Application pending·0 cites
- 1740US9419110B2Method for reducing contact resistance in MOSIMEC VZW·Filed 2015·Granted Aug 16, 2016·0 cites·16 claims
- 1838US10354868B2Method for formation of a transition metal dichalcogenide (TMDC) material layerIMEC VZW·Filed 2017·Granted Jul 16, 2019·0 cites·15 claims
- 1938US2020119174A1Method for forming a transition metal dichalcogenide - group iii-v heterostructure and a tunneling field effect transistorIMEC VZW·Filed 2019·Application pending·0 cites
- 2037US10763643B2Laser devicesIMEC VZW·Filed 2017·Granted Sep 1, 2020·0 cites·8 claims
- 2137US10128371B2Self-aligned nanostructures for semiconductor devicesIMEC VZW·Filed 2016·Granted Nov 13, 2018·0 cites·14 claims
- 2232US2017170313A1Method of Producing a Pre-Patterned Structure for Growing Vertical NanostructuresIMEC VZW·Filed 2016·Application pending·0 cites
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