Inventor · disambiguated record
David Laforet
Also filed as: LAFORET DAVID
32 granted patents·10 pending applications·94 citations·filing 2012–2025
95Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG38INFINEON TECHNOLOGIES AG2BLANK OLIVER1INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
42 records- 0197US8558308B1Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductorBLANK OLIVER·Filed 2012·Granted Oct 15, 2013·47 cites·25 claims
- 0295US9680004B2Power MOSFET with seperate gate and field plate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 13, 2017·12 cites·15 claims
- 0394US11158735B2Charge compensation MOSFET with graded epi profile and methods of manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 26, 2021·3 cites·18 claims
- 0488US11462620B2Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 4, 2022·1 cites·20 claims
- 0586US10510846B2Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Dec 17, 2019·3 cites·26 claims
- 0685US10269953B2Semiconductor device having a trench gateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 23, 2019·3 cites·22 claims
- 0784US10566426B2Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 18, 2020·4 cites·27 claims
- 0879US10872957B2Semiconductor device with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 22, 2020·1 cites·20 claims
- 0979US9847395B2Semiconductor device including a contact structure directly adjoining a mesa section and a field electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 19, 2017·4 cites·20 claims
- 1079US9287376B1Method of manufacturing a gate trench with thick bottom oxideINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 15, 2016·4 cites·18 claims
- 1178US2022376062A1Semiconductor device having needle-shaped first field plate structures and needle-shaped second field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 1276US9972714B2Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 15, 2018·2 cites·15 claims
- 1375US2025248066A1Transistor device having a cell field including transistor cells and method of fabricating a gate of the transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1474US10629595B2Power semiconductor device having different gate crossings, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 21, 2020·2 cites·14 claims
- 1572US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 1672US9029974B2Semiconductor device, junction field effect transistor and vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 12, 2015·3 cites·17 claims
- 1770US12230706B2Transistor device having a cell field and method of fabricating a gate of the transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Feb 18, 2025·0 cites·5 claims
- 1870US9865726B2Method of manufacturing a semiconductor device with trench gate by using a screen oxide layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jan 9, 2018·1 cites·14 claims
- 1969US10050113B2Semiconductor device with needle-shaped field plates and a gate structure with edge and node portionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 14, 2018·1 cites·21 claims
- 2068US9755066B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 5, 2017·1 cites·14 claims
- 2166US11600723B2Transistor device and method of fabricating a gate of a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 2265US11848379B2MOSFET having a drift region with a graded doping profile and methods of manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Dec 19, 2023·0 cites·21 claims
- 2361US9621058B2Reducing switching losses associated with a synchronous rectification MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Apr 11, 2017·1 cites·20 claims
- 2459US10868173B2Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 15, 2020·0 cites·25 claims
- 2557US2025063794A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2655US10205015B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 12, 2019·0 cites·19 claims
- 2755US2024395926A1Semiconductor device and method for fabricating a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2853US11764272B2Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 19, 2023·0 cites·14 claims
- 2953US10453929B2Methods of manufacturing a power MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 22, 2019·0 cites·16 claims
- 3053US9728614B2Semiconductor device comprising a field electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 8, 2017·0 cites·20 claims
- 3152US9536960B2Semiconductor device comprising a field electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 3, 2017·0 cites·16 claims
- 3252US2024339507A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 3350US11296218B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 3450US10811531B2Transistor device with gate resistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 20, 2020·0 cites·16 claims
- 3550US2025254910A1Transistor device and method of forming a gate electrode and a field plate in a columnar trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 3650US2025301750A1Semiconductor devices and methods of manufacturing sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 3744US10573731B2Semiconductor transistor and method for forming the semiconductor transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 3842US9799738B2Semiconductor device with field electrode and contact structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 24, 2017·0 cites·16 claims
- 3941US11251275B2Needle cell trench MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Feb 15, 2022·0 cites·22 claims
- 4041US2023055891A1Transistor Device and Method of Fabricating a Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Application pending·0 cites
- 4136US2016293751A1Semiconductor Device with Gate FinsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 4235US2017077227A1Needle Field Plate MOSFET with Mesa Contacts and Conductive PostsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →