Inventor · disambiguated record
Daisuke Oya
Also filed as: OYA DAISUKE
16 granted patents·2 pending applications·80 citations·filing 2011–2021
90Inventor score
Top patents by PatentIndex Score
18 records- 0188USD798832SPower semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Oct 3, 2017·35 cites·1 claims
- 0285US8698195B2Semiconductor deviceOYA DAISUKE·Filed 2011·Granted Apr 15, 2014·12 cites·11 claims
- 0382US10898946B2Semiconductor-mounting heat dissipation base plate and production method thereforMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Jan 26, 2021·3 cites·14 claims
- 0482USD790491SPower semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jun 27, 2017·23 cites·1 claims
- 0581US10483176B2Semiconductor moduleMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 19, 2019·4 cites·7 claims
- 0670US10340217B2Semiconductor device including a cylindrical electrode inserted into a looped portion of an electrodeMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Jul 2, 2019·1 cites·11 claims
- 0765US11484936B2Semiconductor-mounting heat dissipation base plate and production method thereforMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 1, 2022·0 cites·19 claims
- 0865US10748830B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 18, 2020·1 cites·10 claims
- 0956US10651121B2Semiconductor device manufacturing method including forming a wide portion spreading over a looped portionMITSUBISHI ELECTRIC CORP·Filed 2019·Granted May 12, 2020·0 cites·4 claims
- 1052US12221389B2Aluminum/ceramic bonding substrate and method for producing sameDOWA METALTECH CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·9 claims
- 1151US11569141B2Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrodeMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jan 31, 2023·0 cites·22 claims
- 1250US12308305B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted May 20, 2025·0 cites·13 claims
- 1349US11887904B2Integrally bonded semiconductor device and power converter including the sameMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jan 30, 2024·0 cites·7 claims
- 1443US2022359423A1Semiconductor device and manufacturing method of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Application pending·0 cites
- 1541US2019350078A1Metal-ceramic bonded substrate, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2018·Application pending·0 cites
- 1639US9445497B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Sep 13, 2016·0 cites·9 claims
- 1737US11271043B2Semiconductor module and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Mar 8, 2022·0 cites·17 claims
- 1833USD827590SPower semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 4, 2018·1 cites·1 claims
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