Inventor · disambiguated record
Po-Hsiung Leu
Also filed as: LEU PO-HSIUNG
23 granted patents·7 pending applications·50 citations·filing 2004–2019
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19TAIWAN SEMICONDUCTOR MFG5CHANG JEN-CHI1CHIANG CHIH-WEI1CHUANG HARRY1
Top patents by PatentIndex Score
30 records- 0195US10533252B2Showerhead, semicondcutor processing apparatus having the same and semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 14, 2020·10 cites·18 claims
- 0289US10161041B2Thermal chemical vapor deposition system and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·18 claims
- 0389US9356120B2Metal gate transistor and method for tuning metal gate profileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 31, 2016·10 cites·20 claims
- 0481US9716044B2Interlayer dielectric structure with high aspect ratio process (HARP)CHANG JEN-CHI·Filed 2011·Granted Jul 25, 2017·6 cites·20 claims
- 0580US10864530B2Coating apparatus and method of forming coating filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·3 cites·20 claims
- 0679US10867787B2Method for controlling plasma in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0779US10626499B2Deposition device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·1 cites·20 claims
- 0879US9573144B2Coating apparatus and method of forming coating filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·4 cites·20 claims
- 0960US8946095B2Method of forming interlayer dielectric film above metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 3, 2015·1 cites·20 claims
- 1056US6897147B1Solution for copper hillock induced by thermal strain with buffer zone for strain relaxationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 24, 2005·8 cites·19 claims
- 1155US2020203473A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 1254US10724140B2Thermal chemical vapor deposition system and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 1354US9831307B2Gap fill self planarization on post EPITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·0 cites·20 claims
- 1452US9536771B2Gap fill self planarization on post EPITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 3, 2017·0 cites·20 claims
- 1548US10867838B2Semiconductor device having a shallow trench isolation structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 1648US9631273B2Apparatus for dielectric deposition processWANG LAN-HAI·Filed 2012·Granted Apr 25, 2017·0 cites·19 claims
- 1748US9048185B2Profile pre-shaping for replacement poly gate interlayer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 2, 2015·0 cites·20 claims
- 1846US9953861B2Semiconductor device having a shallow trench isolation structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·0 cites·20 claims
- 1946US9209071B2Semiconductor structure with anti-etch structure in via and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 8, 2015·0 cites·20 claims
- 2046US2013292791A1Semiconductor device and method for forming the sameLIN CHUN-LI·Filed 2012·Application pending·0 cites
- 2145US10395918B2Method and system for controlling plasma in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 27, 2019·0 cites·20 claims
- 2242US10164063B2Semiconductor structure with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 2342US9324559B2Thin film deposition apparatus with multi chamber design and film deposition methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 26, 2016·0 cites·17 claims
- 2441US9607809B2High density plasma reactor with multiple top coilsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 28, 2017·0 cites·16 claims
- 2540US8803249B2Profile pre-shaping for replacement poly gate interlayer dielectricCHIANG CHIH-WEI·Filed 2012·Granted Aug 12, 2014·0 cites·19 claims
- 2640US2007026653A1Cap layer on doped dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2739US2015001728A1Pre-treatment method for metal-oxide reduction and device formedTAIWAN SEMICONDUCTOR MFG·Filed 2013·Application pending·0 cites
- 2839US2006105558A1Inter-metal dielectric scheme for semiconductorsCHUANG HARRY·Filed 2004·Application pending·0 cites
- 2937US2006017166A1Robust fluorine containing Silica Glass (FSG) Film with less free fluorineLEU PO-HSIUNG·Filed 2004·Application pending·0 cites
- 3029US2017053783A1Semiconductor apparatus and cleaning method for the semiconductor apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →