Inventor · disambiguated record
Vincent S. Chang
Also filed as: CHANG VINCENT · CHANG VINCENT S
7 granted patents·2 pending applications·62 citations·filing 2003–2008
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG9
Top patents by PatentIndex Score
9 records- 0192US7824990B2Multi-metal-oxide high-K gate dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 2, 2010·25 cites·21 claims
- 0274US7327009B2Selective nitride liner formation for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 5, 2008·5 cites·4 claims
- 0371US7361572B2STI liner modification methodTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 22, 2008·4 cites·15 claims
- 0471US7176138B2Selective nitride liner formation for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·15 cites·21 claims
- 0568US7838205B2Utilization of electric field with isotropic development in photolithographyTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 23, 2010·2 cites·18 claims
- 0660US6864109B2Method and system for determining a component concentration of an integrated circuit featureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 8, 2005·10 cites·17 claims
- 0750US2008157266A1Sti liner modification methodTAIWAN SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 0847US7166525B2High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 23, 2007·1 cites·20 claims
- 0938US2008001237A1Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
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