Inventor · disambiguated record
Pin-Shiang Chen
Also filed as: CHEN PIN-SHIANG
16 granted patents·63 citations·filing 2014–2021
91Inventor score
Top patents by PatentIndex Score
16 records- 0195US9490430B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·16 cites·19 claims
- 0295US9240478B23D UTB transistor using 2D material channelsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 19, 2016·22 cites·20 claims
- 0390US11043376B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·2 cites·20 claims
- 0490US10109477B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·5 cites·20 claims
- 0589US9559168B2Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·7 cites·20 claims
- 0688US10269981B2Multi-channel field effect transistors using 2D-materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 23, 2019·5 cites·20 claims
- 0784US10636651B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·2 cites·13 claims
- 0883US9660056B23D UTB transistor using 2D-material channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·3 cites·20 claims
- 0975US11664218B2Semiconductor device and methodUNIV NAT TAIWAN·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1072US11018239B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·1 cites·20 claims
- 1165US11374115B2Method for forming semiconductor device having boron-doped germanium tin epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 1259US9425250B2Transistor with wurtzite channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·0 cites·20 claims
- 1358US10777663B2Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·20 claims
- 1457US10879404B2Multi-channel field effect transistors using 2D-materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 1555US9679961B2Transistor with wurtzite channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·0 cites·20 claims
- 1650US10290708B2Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 14, 2019·0 cites·20 claims
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