Inventor · disambiguated record
Man-Ling Lu
Also filed as: LU MAN-LING
15 granted patents·6 pending applications·44 citations·filing 2014–2024
90Inventor score
Top patents by PatentIndex Score
21 records- 0191US9780218B1Bottom-up epitaxy growth on air-gap bufferUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 3, 2017·8 cites·16 claims
- 0289US9385191B2FINFET structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 5, 2016·10 cites·5 claims
- 0387US9691901B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 27, 2017·6 cites·12 claims
- 0486US9899523B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 20, 2018·5 cites·19 claims
- 0586US9786510B2Fin-shaped structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 10, 2017·5 cites·6 claims
- 0677US10158022B2Bottom-up epitaxy growth on air-gap bufferUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 18, 2018·2 cites·16 claims
- 0777US9224864B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 29, 2015·4 cites·19 claims
- 0873US10050146B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Aug 14, 2018·2 cites·5 claims
- 0965US9634125B2Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 25, 2017·1 cites·12 claims
- 1065US9373718B2Etching method for forming grooves in Si-substrate and fin field-effect transistorUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jun 21, 2016·1 cites·13 claims
- 1164US10930517B2Method of forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 23, 2021·0 cites·7 claims
- 1258US10418251B2Method of forming fin-shaped structure having ladder-shaped cross-sectional profileUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 17, 2019·0 cites·5 claims
- 1358US2025218875A1Semiconductor deviceMEDIATEK INC·Filed 2024·Application pending·0 cites
- 1455US10529856B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 7, 2020·0 cites·19 claims
- 1549US9397190B2Fabrication method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
- 1645US2015357436A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1745US2016049496A1Mos transistor and semiconductor process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1843US2016049467A1Fin field effect transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1943US2015191908A1Decorated fireproof building substratePRIOR COMPANY LTD·Filed 2014·Application pending·0 cites
- 2043US2015255563A1Method for manufacturing a semiconductor device having multi-layer hard maskUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2138US9978854B2Fin field-effect transistorUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 22, 2018·0 cites·9 claims
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