Inventor · disambiguated record
Hidetoshi Wakamatsu
Also filed as: WAKAMATSU HIDETOSHI
22 granted patents·4 pending applications·308 citations·filing 1987–2013
95Inventor score
Top patents by PatentIndex Score
26 records- 0191US7521324B2Semiconductor device and method for manufacturing the sameOHMI TADAHIRO·Filed 2004·Granted Apr 21, 2009·51 cites·11 claims
- 0286US6146135AOxide film forming methodOHMI TADAHIRO·Filed 1996·Granted Nov 14, 2000·54 cites·9 claims
- 0385US4839306AMethod of manufacturing a trench filled with an insulating material in a semiconductor substrateOKI ELECTRIC IND CO LTD·Filed 1988·Granted Jun 13, 1989·66 cites·8 claims
- 0479US6949478B2Oxide film forming methodOHMI TADAHIRO·Filed 2002·Granted Sep 27, 2005·13 cites·18 claims
- 0577US9620794B2Fuel cell system and method of operating the samePANASONIC CORP·Filed 2013·Granted Apr 11, 2017·2 cites·9 claims
- 0667US9431668B2Power generation system and operation method thereofSHIOSAKI KEISUKE·Filed 2012·Granted Aug 30, 2016·2 cites·10 claims
- 0767US6387165B1Airborne molecular contaminant removing apparatusOKI ELECTRIC IND CO LTD·Filed 2000·Granted May 14, 2002·16 cites·6 claims
- 0865US6376401B1Ultraviolet ray-transparent optical glass material and method of producing sameTOSOH CORP·Filed 1999·Granted Apr 23, 2002·32 cites·21 claims
- 0961US6497757B2Apparatus for removing impurity contents in the airOKI ELECTRIC IND CO LTD·Filed 2000·Granted Dec 24, 2002·10 cites·8 claims
- 1058US5948265AIon-exchanger, process for production thereof, and process for removal of multiply charged anions employing the ion-exchangerTOSOH CORP·Filed 1997·Granted Sep 7, 1999·20 cites·15 claims
- 1158US2005206018A1Oxide film forming methodOHMI TADAHIRO·Filed 2005·Application pending·0 cites
- 1256US7332346B2Method of collecting chemically contaminating impurity constituents contained in airOKI ELECTRIC IND CO LTD·Filed 2002·Granted Feb 19, 2008·1 cites·3 claims
- 1354US6645273B2Method for removing impurity contents in the airOKI ELECTRIC IND CO LTD·Filed 2002·Granted Nov 11, 2003·5 cites·10 claims
- 1450US4879253AMethod for fabricating a semiconductor device using a BPSG layer containing high concentrations of phosphorus and boronOKI ELECTRIC IND CO LTD·Filed 1988·Granted Nov 7, 1989·17 cites·10 claims
- 1550US2015147672A1Power generation system and method of operating the samePANASONIC IP MAN CO LTD·Filed 2013·Application pending·0 cites
- 1649US9385384B2Power generation system and method of operating the sameTATSUI HIROSHI·Filed 2012·Granted Jul 5, 2016·0 cites·10 claims
- 1745US8911912B2Fuel cell system and method of operating fuel cell systemYUKIMASA AKINORI·Filed 2011·Granted Dec 16, 2014·0 cites·8 claims
- 1845US5120677AMethod for making a semiconductor device by doping with arsenic, of at least 25 wt. % into a polysilicon layerOKI ELECTRIC IND CO LTD·Filed 1990·Granted Jun 9, 1992·10 cites·10 claims
- 1941US2013252122A1Power generator and method of operating the sameMORITA JUNJI·Filed 2012·Application pending·0 cites
- 2036US4810818AProcess for producing alpha-aspartyl-l-phenylalanine methyl ester having an improved solubilityTOYO SODA MFG CO LTD·Filed 1987·Granted Mar 7, 1989·3 cites·5 claims
- 2134US4835301AProcess for producing stable α-L-aspartyl-L-phenylalanine methyl esterTOYO SODA MFG CO LTD·Filed 1987·Granted May 30, 1989·2 cites·7 claims
- 2233US4831180AProcess for producing alpha-L-aspartyl-L-phenylalanine methyl ester having an improved solubilityTOYO SODA MFG CO LTD·Filed 1987·Granted May 16, 1989·3 cites·5 claims
- 2330US9023544B2Fuel cell systemHATANO SUSUMU·Filed 2011·Granted May 5, 2015·0 cites·6 claims
- 2430US5659066AMethod for crystallizing α-L-aspartyl-L-phenylalanine methyl esterHOLLAND SWEETENER CO·Filed 1996·Granted Aug 19, 1997·1 cites·15 claims
- 2528US5347035AMethod for crystallizing α-L-aspartyl-L-phenylalanine methyl esterTOSOH CORP·Filed 1993·Granted Sep 13, 1994·0 cites·10 claims
- 2628US2012118292A1Artificial Respirator and Operation Method ThereofAIKAWA JUNICHI·Filed 2010·Application pending·0 cites
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