Inventor · disambiguated record
Shih-Guei Yan
Also filed as: YAN SHIH-GUEI
18 granted patents·1 pending application·7 citations·filing 2010–2016
88Inventor score
Top patents by PatentIndex Score
19 records- 0176US9373629B1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Granted Jun 21, 2016·3 cites·17 claims
- 0272US8981459B2Structure and manufacturing method of a non-volatile memoryMACRONIX INT CO LTD·Filed 2013·Granted Mar 17, 2015·3 cites·24 claims
- 0364US9385240B1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Granted Jul 5, 2016·1 cites·15 claims
- 0455US9349878B2Multi level programmable memory structureMACRONIX INT CO LTD·Filed 2014·Granted May 24, 2016·0 cites·8 claims
- 0554US9786794B2Method of fabricating memory structureMACRONIX INT CO LTD·Filed 2016·Granted Oct 10, 2017·0 cites·18 claims
- 0654US9070588B2Non-volatile memory structureMACRONIX INT CO LTD·Filed 2014·Granted Jun 30, 2015·0 cites·10 claims
- 0754US9048263B2Manufacturing method of non-volatile memoryMACRONIX INT CO LTD·Filed 2014·Granted Jun 2, 2015·0 cites·15 claims
- 0852US9018085B2Method of fabricating memory device with charge storage layer at gap located side of gate dielectric underneath the gateMACRONIX INT CO LTD·Filed 2014·Granted Apr 28, 2015·0 cites·15 claims
- 0951US8835297B2Fabricating method of non-volatile memory structureMACRONIX INT CO LTD·Filed 2013·Granted Sep 16, 2014·0 cites·10 claims
- 1047US9269583B1Method for fabricating memory deviceMACRONIX INT CO LTD·Filed 2014·Granted Feb 23, 2016·0 cites·17 claims
- 1147US9209198B2Memory cell and manufacturing method thereofMACRONIX INT CO LTD·Filed 2014·Granted Dec 8, 2015·0 cites·18 claims
- 1246US8698222B2Memory device with charge storage layers at the gaps located both sides of the gate dielectric underneath the gateYAN SHIH-GUEI·Filed 2011·Granted Apr 15, 2014·0 cites·8 claims
- 1344US8952440B2Memory device and method of forming the sameMACRONIX INT CO LTD·Filed 2013·Granted Feb 10, 2015·0 cites·6 claims
- 1444US8796754B2Multi level programmable memory structure with multiple charge storage structures and fabricating method thereofCHENG CHENG-HSIEN·Filed 2011·Granted Aug 5, 2014·0 cites·15 claims
- 1541US8791522B2Non-volatile memoryCHENG CHIH-CHIEH·Filed 2011·Granted Jul 29, 2014·0 cites·5 claims
- 1640US8569822B2Memory structureHUANG JYUN-SIANG·Filed 2011·Granted Oct 29, 2013·0 cites·10 claims
- 1737US8674424B2Memory device with charge storage layers at the sidewalls of the gate and method for fabricating the sameYAN SHIH-GUEI·Filed 2011·Granted Mar 18, 2014·0 cites·9 claims
- 1836US8664709B2Non-volatile memory and fabricating method thereofYAN SHIH-GUEI·Filed 2010·Granted Mar 4, 2014·0 cites·21 claims
- 1933US2016218111A1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Application pending·0 cites
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