Inventor · disambiguated record
Suk-Ho Joo
Also filed as: JOO SUK-HO
13 granted patents·2 pending applications·210 citations·filing 1996–2011
93Inventor score
Top patents by PatentIndex Score
15 records- 0191US7037749B2Methods for forming phase changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·40 cites·25 claims
- 0286US7763878B2Phase changeable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 27, 2010·11 cites·15 claims
- 0386US7419881B2Phase changeable memory device and method of formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·16 cites·20 claims
- 0484US5843818AMethods of fabricating ferroelectric capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·63 cites·29 claims
- 0582US7772067B2Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materialsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·9 cites·20 claims
- 0680US7397092B2Phase changable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·5 cites·24 claims
- 0773US5965911AMos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 12, 1999·31 cites·3 claims
- 0872US8236682B2Method of forming contact structureBYUN KYUNG-RAE·Filed 2010·Granted Aug 7, 2012·5 cites·20 claims
- 0971US8557661B2Methods of manufacturing a semiconductor device and a semiconductor memory device therebyYU HAN-GEUN·Filed 2011·Granted Oct 15, 2013·4 cites·16 claims
- 1068US6887720B2Ferroelectric memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 3, 2005·10 cites·14 claims
- 1168US6717196B2Ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·10 cites·9 claims
- 1264US7494866B2Semiconductor device and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·23 claims
- 1338US2008061334A1Semiconductor memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1437US2006273366A1Methods of manufacturing ferroelectric capacitors and semiconductor devicesKO HWA-YOUNG·Filed 2006·Application pending·0 cites
- 1531US5795817AMOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 18, 1998·2 cites·5 claims
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