Inventor · disambiguated record
Jing Chen
Also filed as: CHEN JING · CHEN JING-YING
26 granted patents·5 pending applications·227 citations·filing 2006–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13UNIV HONG KONG SCIENCE & TECHN7CHEN JING3UNIV HONG KONG SCI & TECH3UNIV HONG KONG SCIENCE & TECH3
Top patents by PatentIndex Score
31 records- 0195US11935950B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·2 cites·20 claims
- 0295US7932539B2Enhancement-mode III-N devices, circuits, and methodsUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Apr 26, 2011·69 cites·18 claims
- 0393US8502323B2Reliable normally-off III-nitride active device structures, and related methods and systemsCHEN JING·Filed 2008·Granted Aug 6, 2013·45 cites·8 claims
- 0493US7972915B2Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETsUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Jul 5, 2011·38 cites·22 claims
- 0591US8564020B2Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the sameCHEN JING·Filed 2010·Granted Oct 22, 2013·16 cites·28 claims
- 0688US8044432B2Low density drain HEMTsUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Oct 25, 2011·18 cites·14 claims
- 0784US11107916B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·2 cites·20 claims
- 0884US2025338631A1Pnp controlled esd protection device with high holding voltage and snapbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0983US8937336B2Passivation of group III-nitride heterojunction devicesUNIV HONG KONG SCIENCE & TECHN·Filed 2013·Granted Jan 20, 2015·6 cites·5 claims
- 1083US2025040219A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1183US2024186412A1High Voltage Transistor StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1280US10270436B2Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistorsUNIV HONG KONG SCI & TECH·Filed 2015·Granted Apr 23, 2019·6 cites·28 claims
- 1380US9160326B2Gate protected semiconductor devicesUNIV HONG KONG SCIENCE & TECHN·Filed 2013·Granted Oct 13, 2015·6 cites·17 claims
- 1480US8809987B2Normally-off III-nitride metal-2DEG tunnel junction field-effect transistorsCHEN JING·Filed 2010·Granted Aug 19, 2014·6 cites·20 claims
- 1578US12490520B2PNP controlled ESD protection device with high holding voltage and snapbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 1678US12119384B2Semiconductor device having conductive field plate overlapping an edge of an active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
- 1777US9799766B2High voltage transistor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 24, 2017·2 cites·20 claims
- 1876US10404251B2Power device with integrated gate driverUNIV HONG KONG SCI & TECH·Filed 2017·Granted Sep 3, 2019·5 cites·20 claims
- 1970US10553687B2Semiconductor device having conductive feature overlapping an edge of an active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 4, 2020·1 cites·20 claims
- 2070US9337028B2Passivation of group III-nitride heterojunction devicesUNIV HONG KONG SCIENCE & TECHN·Filed 2014·Granted May 10, 2016·2 cites·20 claims
- 2169US11894362B2PNP controlled ESD protection device with high holding voltage and snapbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 2267US11527624B2Method of manufacturing a semiconductor device having a conductive field plate and a first wellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 2366US11705511B2Metal-insulator-semiconductor transistors with gate-dielectric/semiconductor interfacial protection layerUNIV HONG KONG SCIENCE & TECH·Filed 2017·Granted Jul 18, 2023·2 cites·29 claims
- 2460US10505032B2Semiconductor device with III-nitride channel region and silicon carbide drift regionUNIV HONG KONG SCI & TECH·Filed 2016·Granted Dec 10, 2019·1 cites·25 claims
- 2559US10269959B2High voltage transistor structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 2654US2023378163A1Gan power transistor having a voltage clamping node with avalanche capabilityUNIV HONG KONG SCIENCE & TECH·Filed 2023·Application pending·0 cites
- 2745US11139374B2Field-effect transistors with semiconducting gateUNIV HONG KONG SCIENCE & TECH·Filed 2019·Granted Oct 5, 2021·0 cites·20 claims
- 2843US10290714B2Transistor structure with field plate for reducing area thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 14, 2019·0 cites·20 claims
- 2942US9761494B2Semiconductor structure and method of forming the sameCHEN PO-YU·Filed 2012·Granted Sep 12, 2017·0 cites·18 claims
- 3039US2010084687A1Aluminum gallium nitride/gallium nitride high electron mobility transistorsUNIV HONG KONG SCIENCE & TECHN·Filed 2009·Application pending·0 cites
- 3136US11476325B2Semiconductor deviceWEI JIN·Filed 2020·Granted Oct 18, 2022·0 cites·8 claims
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