Inventor · disambiguated record
Kimiyoshi Koshi
Also filed as: KOSHI KIMIYOSHI
8 granted patents·5 pending applications·16 citations·filing 2012–2023
80Inventor score
Top patents by PatentIndex Score
13 records- 0192US9926646B2Method for growing B-Ga2O3-based single crystalTAMURA SEISAKUSHO KK·Filed 2013·Granted Mar 27, 2018·7 cites·9 claims
- 0289US9349915B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted May 24, 2016·3 cites·13 claims
- 0384US11725299B2Single crystal manufacturing apparatus and methodNOVEL CRYSTAL TECH INC·Filed 2021·Granted Aug 15, 2023·1 cites·12 claims
- 0479US9915009B2Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing sameTAMURA SEISAKUSHO KK·Filed 2014·Granted Mar 13, 2018·1 cites·18 claims
- 0578US9431489B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 30, 2016·3 cites·8 claims
- 0677US12163246B2Single crystal manufacturing apparatus and methodNOVEL CRYSTAL TECH INC·Filed 2023·Granted Dec 10, 2024·0 cites·17 claims
- 0777US9915010B2Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-based single crystal substrate and method for producing sameTAMURA SEISAKUSHO KK·Filed 2014·Granted Mar 13, 2018·1 cites·15 claims
- 0852US2023130166A1Single crystal growth apparatusNOVEL CRYSTAL TECH INC·Filed 2022·Application pending·0 cites
- 0946US10196756B2β-Ga2O3 single-crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted Feb 5, 2019·0 cites·8 claims
- 1044US2014352604A1METHOD FOR GROWING ß-Ga2O3 SINGLE CRYSTALTAMURA SEISAKUSHO KK·Filed 2012·Application pending·0 cites
- 1138US2015155356A1Semiconductor laminate structure and semiconductor elementTAMURA SEISAKUSHO KK·Filed 2013·Application pending·0 cites
- 1238US2017137965A1Gallium oxide substrateTAMURA SEISAKUSHO KK·Filed 2015·Application pending·0 cites
- 1331US2015380500A1Ga2O3-BASED SINGLE CRYSTAL SUBSTRATETAMURA SEISAKUSHO KK·Filed 2015·Application pending·0 cites
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