Inventor · disambiguated record
Yu-Gyun Shin
Also filed as: SHIN YU-GYUN
67 granted patents·37 pending applications·898 citations·filing 1995–2016
99Inventor score
Top patents by PatentIndex Score
104 records- 0198US7521331B2High dielectric film and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·64 cites·31 claims
- 0297US6107143AMethod for forming a trench isolation structure in an integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 22, 2000·287 cites·14 claims
- 0396US7501674B2Semiconductor device having fin transistor and planar transistor and associated methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 10, 2009·38 cites·14 claims
- 0495US7351622B2Methods of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·54 cites·17 claims
- 0591US7998851B2Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·11 cites·20 claims
- 0690US7326608B2Fin field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 5, 2008·16 cites·13 claims
- 0789US7537980B2Method of manufacturing a stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 26, 2009·14 cites·22 claims
- 0889US7419918B2Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·13 cites·23 claims
- 0987US7442596B2Methods of manufacturing fin type field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·12 cites·19 claims
- 1086US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 1186US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 1285US7507652B2Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 24, 2009·10 cites·31 claims
- 1384US7968442B2Fin field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 28, 2011·11 cites·7 claims
- 1484US7141116B2Method for manufacturing a silicon structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 28, 2006·5 cites·21 claims
- 1584US6037237ATrench isolation methods utilizing composite oxide filmsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 14, 2000·74 cites·15 claims
- 1682US7390719B2Method of manufacturing a semiconductor device having a dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·10 cites·20 claims
- 1779US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 1878US7652340B2Fin field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·6 cites·14 claims
- 1977US7557388B2MOSFET formed on a strained silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·2 cites·10 claims
- 2077US7364955B2Methods of manufacturing semiconductor devices having single crystalline silicon layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·4 cites·37 claims
- 2176US7459353B2Methods of laterally forming single crystalline thin film regions from seed layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·5 cites·23 claims
- 2275US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 2375US7608509B2Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·6 cites·14 claims
- 2474US7393700B2Low temperature methods of etching semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·4 cites·25 claims
- 2574US7315063B2CMOS transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·7 cites·15 claims
- 2673US7560319B2Method for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·4 cites·20 claims
- 2772US8691649B2Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devicesPARK TAI-SU·Filed 2011·Granted Apr 8, 2014·4 cites·20 claims
- 2872US7956464B2Sputtering target and semiconductor device manufactured using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 7, 2011·5 cites·20 claims
- 2972US5885883AMethods of forming trench-based isolation regions with reduced susceptibility to edge defectsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 23, 1999·40 cites·15 claims
- 3071US6121110ATrench isolation method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 19, 2000·40 cites·28 claims
- 3169US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 3269US6930062B2Methods of forming an oxide layer in a transistor having a recessed gateSAMSUNG ELECTRONICS CO INC·Filed 2004·Granted Aug 16, 2005·12 cites·9 claims
- 3368US7799648B2Method of forming a MOSFET on a strained silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 21, 2010·0 cites·8 claims
- 3468US7514744B2Semiconductor device including carrier accumulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·4 cites·17 claims
- 3568US7494859B2Semiconductor device having metal gate patterns and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·22 claims
- 3668US7053006B2Methods of fabricating oxide layers by plasma nitridation and oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 30, 2006·11 cites·15 claims
- 3766US7364990B2Epitaxial crystal growth process in the manufacturing of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·2 cites·21 claims
- 3865US7492006B2Semiconductor transistors having surface insulation layers and methods of fabricating such transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 17, 2009·3 cites·32 claims
- 3964US8598024B2Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the methodKIM JIN-BUM·Filed 2011·Granted Dec 3, 2013·1 cites·18 claims
- 4063US8409947B2Method of manufacturing semiconductor device having stress creating layerKIM JIN-BUM·Filed 2010·Granted Apr 2, 2013·1 cites·9 claims
- 4163US7531881B2Semiconductor devices having transistors with different gate structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·2 cites·14 claims
- 4263US5858858AAnnealing methods for forming isolation trenchesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 12, 1999·28 cites·23 claims
- 4362US8604551B2Semiconductor device including trenches having particular structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 10, 2013·1 cites·4 claims
- 4462US7459372B2Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·1 cites·27 claims
- 4562US7396761B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·1 cites·15 claims
- 4661US8183136B2Method of forming insulating layer and method of manufacturing transistor using the sameJEONG SEONG-HOON·Filed 2010·Granted May 22, 2012·1 cites·10 claims
- 4759US8470703B2Semiconductor device and method of fabricating the sameLEE BYUNG-HAK·Filed 2011·Granted Jun 25, 2013·2 cites·16 claims
- 4859US8361860B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·1 cites·15 claims
- 4957US8691642B2Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation processLEE JUNG-CHAN·Filed 2011·Granted Apr 8, 2014·1 cites·18 claims
- 5055US8415224B2Method of fabricating a semiconductor device including forming trenches having particular structuresHYUN SUNG-WOO·Filed 2011·Granted Apr 9, 2013·1 cites·16 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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