Inventor · disambiguated record
Daniel Delagebeaudeuf
Also filed as: DELAGEBEAUDEUF DANIEL
9 granted patents·167 citations·filing 1975–1993
89Inventor score
Top patents by PatentIndex Score
9 records- 0189US4471366AField effect transistor with high cut-off frequency and process for forming sameTHOMSON CSF·Filed 1982·Granted Sep 11, 1984·89 cites·8 claims
- 0261US5367183ASemiconductor device with complementary transistorsTHOMSON CSF SEMICONDUCTEURS·Filed 1993·Granted Nov 22, 1994·22 cites·8 claims
- 0357US4455564AField effect transistor with a high cut-off frequencyTHOMSON CSF·Filed 1983·Granted Jun 19, 1984·15 cites·5 claims
- 0456US4186407AHeterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorusTHOMSON CSF·Filed 1978·Granted Jan 29, 1980·9 cites·7 claims
- 0547US4974038AMicrowave transistor with double heterojunctionTHOMSON HYBRIDES MICROONDES·Filed 1988·Granted Nov 27, 1990·15 cites·10 claims
- 0639US4176366AAvalanche transit time diode with heterojunction structureTHOMSON CSF·Filed 1978·Granted Nov 27, 1979·4 cites·4 claims
- 0738US3992715ALow-noise thermo-ionic injection diodeTHOMSON CSF·Filed 1975·Granted Nov 16, 1976·4 cites·5 claims
- 0831US4977434AField-effect semiconductor device comprising an ancillary electrodeTHOMSON HYBRIDES MICROONDES·Filed 1988·Granted Dec 11, 1990·5 cites·7 claims
- 0925US4872049AEncapsulated low-noise ultra-high frequency semiconductor deviceTHOMSON HYBRIDES MICROONDES·Filed 1987·Granted Oct 3, 1989·4 cites·6 claims
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