Inventor · disambiguated record
Takashi Kuroi
Also filed as: KUROI TAKASHI
54 granted patents·8 pending applications·1,243 citations·filing 1993–2010
99Inventor score
Top patents by PatentIndex Score
62 records- 0193US6274457B1Method for manufacturing an isolation trench having plural profile anglesMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 14, 2001·82 cites·4 claims
- 0291US5889335ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 30, 1999·105 cites·7 claims
- 0389US6521527B1Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 18, 2003·45 cites·10 claims
- 0485US5710438ASemiconductor device with a silicide layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 20, 1998·53 cites·8 claims
- 0584US6218262B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 17, 2001·62 cites·6 claims
- 0682US6503799B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 7, 2003·29 cites·7 claims
- 0782US5744845AComplementary MOS field effect transistor with tunnel effect meansMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 28, 1998·53 cites·4 claims
- 0878US6482718B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 19, 2002·27 cites·10 claims
- 0976US6541825B2Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 1, 2003·21 cites·5 claims
- 1076US6300664B1Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 9, 2001·33 cites·14 claims
- 1175US6399985B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·17 cites·8 claims
- 1275US6034409AIsolation trench having plural profile anglesMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 7, 2000·40 cites·2 claims
- 1373US7791163B2Semiconductor device and its manufacturing methodRENESAS TECH CORP·Filed 2005·Granted Sep 7, 2010·5 cites·15 claims
- 1472US5538916AMethod of manufacturing semiconductor device isolation regionMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 23, 1996·54 cites·9 claims
- 1571US6548871B1Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 15, 2003·19 cites·8 claims
- 1670US6841440B2Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jan 11, 2005·15 cites·8 claims
- 1770US6383884B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 7, 2002·16 cites·14 claims
- 1870US6127737ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 3, 2000·39 cites·5 claims
- 1970US5801425ASemiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 1, 1998·32 cites·12 claims
- 2069US5683923ASemiconductor memory device capable of electrically erasing and writing information and a manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 4, 1997·25 cites·4 claims
- 2168US6667221B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 23, 2003·11 cites·10 claims
- 2268US6372604B1Method for forming a trench type element isolation structure and trench type element isolation structureMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·13 cites·17 claims
- 2367US5950098AManufacturing method of a semiconductor device with a silicide layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 7, 1999·22 cites·6 claims
- 2467US5616401AOxynitride film and its formation method, and method for forming an element isolation oxide film using the oxynitride filmMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 1, 1997·34 cites·24 claims
- 2566US6744113B2Semiconductor device with element isolation using impurity-doped insulator and oxynitride filmRENESAS TECH CORP·Filed 2003·Granted Jun 1, 2004·13 cites·10 claims
- 2665US6661066B2Semiconductor device including inversely tapered gate electrode and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 9, 2003·23 cites·2 claims
- 2764US6303432B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 16, 2001·35 cites·18 claims
- 2864US6265743B1Trench type element isolation structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 24, 2001·26 cites·4 claims
- 2964US6232187B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 15, 2001·27 cites·8 claims
- 3063US5446305ASemiconductor device with double structured wellMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 29, 1995·20 cites·2 claims
- 3161US5578507AMethod of making a semiconductor device having buried doped and gettering layersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 26, 1996·22 cites·6 claims
- 3260US5455437ASemiconductor device having crystalline defect isolation regionsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 3, 1995·29 cites·10 claims
- 3359US6577021B2Static-type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 10, 2003·14 cites·12 claims
- 3458US6180519B1Method of forming a layered wiring structure including titanium silicideMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 30, 2001·18 cites·20 claims
- 3555US6737315B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·5 cites·9 claims
- 3655US6498077B2Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 24, 2002·5 cites·25 claims
- 3753US6890837B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2003·Granted May 10, 2005·4 cites·3 claims
- 3851US5488245ASemiconductor memory device capable of electrically erasing and writing informationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 30, 1996·11 cites·16 claims
- 3951US2006027883A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 4050US6017800ASemiconductor device and method of fabricating thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 25, 2000·16 cites·4 claims
- 4150US5554883ASemiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·15 cites·10 claims
- 4246US6707099B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Mar 16, 2004·2 cites·5 claims
- 4346US6323102B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 27, 2001·12 cites·2 claims
- 4446US5536665AMethod of manufacturing a semiconductor device with double structured wellMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 16, 1996·11 cites·9 claims
- 4546US5389563AMethod of fabricating a bipolar transistor having a high ion concentration buried floating collectorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Feb 14, 1995·13 cites·7 claims
- 4646US5341022ABipolar transistor having a high ion concentration buried floating collector and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 23, 1994·13 cites·5 claims
- 4745US8043918B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2010·Granted Oct 25, 2011·0 cites·19 claims
- 4845US5956600AMethod of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 21, 1999·13 cites·31 claims
- 4943US5543647ASemiconductor device having a plurality of impurity layersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 6, 1996·12 cites·9 claims
- 5043US2006163624A1Semiconductor device, and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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