Inventor · disambiguated record
Donald Y. Chao
Also filed as: CHAO DONALD Y
15 granted patents·3 pending applications·102 citations·filing 2004–2022
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG9TAIWAN SEMICONDUCTOR MFG CO LTD4CHAO DONALD Y2CHEN CHIEN HAO1HOU YONG-TIAN1
Top patents by PatentIndex Score
18 records- 0194US8659032B2FinFET and method of fabricating the sameCHAO DONALD Y·Filed 2012·Granted Feb 25, 2014·22 cites·20 claims
- 0293US7232730B2Method of forming a locally strained transistorTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 19, 2007·29 cites·14 claims
- 0390US9634104B2FinFET and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·5 cites·19 claims
- 0490US8679962B2Integrated circuit metal gate structure and method of fabricationHOU YONG-TIAN·Filed 2008·Granted Mar 25, 2014·17 cites·15 claims
- 0584US9960160B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 1, 2018·5 cites·13 claims
- 0683US9053934B2Finfet and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 9, 2015·4 cites·20 claims
- 0778US8524588B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processLIN YIH-ANN·Filed 2009·Granted Sep 3, 2013·5 cites·17 claims
- 0877US7989321B2Semiconductor device gate structure including a gettering layerTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·5 cites·18 claims
- 0976US12015030B2Gate stacks for semiconductor devices of different conductivity typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1064US8357617B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·1 cites·20 claims
- 1160US11289481B2Single metal that performs N work function and P work function in a high-K/metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 29, 2022·0 cites·20 claims
- 1260US7335544B2Method of making MOSFET device with localized stressorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 26, 2008·7 cites·24 claims
- 1359US8159035B2Metal gates of PMOS devices having high work functionsCHAO DONALD Y·Filed 2007·Granted Apr 17, 2012·2 cites·20 claims
- 1455US8993452B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 31, 2015·0 cites·20 claims
- 1554US9362124B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 1648US2008128765A1MOSFET Device With Localized StressorCHEN CHIEN-HAO·Filed 2008·Application pending·0 cites
- 1743US2008138983A1Method of forming tensile stress films for NFET performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1838US2006267106A1Novel semiconductor device with improved channel strain effectTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
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