Inventor · disambiguated record
Byung-Gil Jeon
Also filed as: JEON BYUNG-GIL
48 granted patents·4 pending applications·1,225 citations·filing 1996–2024
98Inventor score
Top patents by PatentIndex Score
52 records- 0198US7916538B2Memory device employing NVRAM and flash memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·334 cites·15 claims
- 0296US7173844B2Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 6, 2007·65 cites·16 claims
- 0394US6097624AMethods of operating ferroelectric memory devices having reconfigurable bit linesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 1, 2000·120 cites·9 claims
- 0493US9842659B2Non-volatile memory device for detecting progressive error, memory system, and method of operating the non-volatile memory deviceNAM SANG-WAN·Filed 2015·Granted Dec 12, 2017·16 cites·10 claims
- 0593US8300465B2Semiconductor and flash memory systemsJEON BYUNG-GIL·Filed 2010·Granted Oct 30, 2012·18 cites·14 claims
- 0691US7787297B2Flash memory device and flash memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·20 cites·9 claims
- 0791US7221616B2Word line driver circuits for use in semiconductor memory and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·26 cites·16 claims
- 0888US7426130B2Ferroelectric RAM device and driving methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 16, 2008·48 cites·18 claims
- 0987US7106617B2Ferroelectric memory devices having a plate line control circuit and methods for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 12, 2006·14 cites·14 claims
- 1086US7336549B2Redundancy circuit and repair method for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 26, 2008·18 cites·5 claims
- 1185US9903901B2Leakage current detection device and nonvolatile memory device having the sameJEON BYUNG GIL·Filed 2015·Granted Feb 27, 2018·8 cites·19 claims
- 1285US6961271B2Memory device in which memory cells having complementary data are arrangedSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 1, 2005·41 cites·3 claims
- 1383US5943257AFerroelectric memory device and data protection method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 24, 1999·56 cites·22 claims
- 1482US7616514B2Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·15 cites·14 claims
- 1582US6385078B2Ferroelectric random access memory (FRAM) device and method for controlling read/write operations thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 7, 2002·32 cites·15 claims
- 1681US6392916B1Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 21, 2002·29 cites·17 claims
- 1780US5835400AFerroelectric memory devices having nondestructive read capability and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 10, 1998·47 cites·10 claims
- 1877US5991188ANon-volatile ferroelectric memory with section plate line drivers and method for accessing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 23, 1999·40 cites·19 claims
- 1977US5978250AFerroelectric memory devices having reconfigurable bit lines and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 2, 1999·40 cites·20 claims
- 2075US7221578B2Ferroelectric random access memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 22, 2007·9 cites·16 claims
- 2175US6914836B2Sense amplifier circuits using a single bit line inputSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 5, 2005·23 cites·22 claims
- 2275US2024410968A1Sensing block inspection device thermally fused and laser-welded to be mounted on battery moduleGIL ENG CO LTD·Filed 2024·Application pending·0 cites
- 2372US7586774B2Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 2472US6594174B2Method for sensing data stored in a ferroelectric random access memory deviceSAMSUNG ELECTRIC·Filed 2001·Granted Jul 15, 2003·20 cites·16 claims
- 2571US7085158B2Nonvolatile semiconductor memory device and one-time programming control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·18 cites·23 claims
- 2670US7120045B2Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 10, 2006·4 cites·20 claims
- 2769US8467244B2Multi-chip semiconductor devices having non-volatile memory devices thereinJEON BYUNG-GIL·Filed 2010·Granted Jun 18, 2013·3 cites·15 claims
- 2866US7617351B2Semiconductor memory device having RAM and ROM areasSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 10, 2009·3 cites·18 claims
- 2965US7313011B2Ferroelectric memory devices having a plate line control circuitSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 25, 2007·4 cites·9 claims
- 3065US6504748B2Ferroelectric random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 7, 2003·14 cites·7 claims
- 3165US6407943B1Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 18, 2002·12 cites·3 claims
- 3265US6088257AFerroelectric random access memory device and method for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 11, 2000·26 cites·10 claims
- 3362US7345945B2Line driver circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·5 cites·20 claims
- 3460US7477536B2Ferroelectric random access memory device and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·4 cites·14 claims
- 3559US7304882B2Circuits for driving FRAMSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·4 cites·16 claims
- 3659US6215693B1Methods of operating ferroelectric memory devices having reconfigurable bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 10, 2001·9 cites·13 claims
- 3759US6201727B1Nonvolatile ferroelectric random access memory device with segmented plate line scheme and a method for driving a plate line segment thereinSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 13, 2001·10 cites·17 claims
- 3858US5805012ASystems and methods for compensating a buffer for power supply fluctuationSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 8, 1998·15 cites·7 claims
- 3957US7800931B2Ferroelectric random access memory apparatus and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·3 cites·19 claims
- 4055US6496426B2Redundancy circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 17, 2002·8 cites·19 claims
- 4155US6295223B1Ferroelectric random access memory with a memory with a stable sensing marginSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 25, 2001·9 cites·15 claims
- 4253US2007158731A1Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4351US7177174B2Ferroelectric memory device having a reference voltage generating circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·6 cites·23 claims
- 4450US6967860B2Ferroelectric memory device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 22, 2005·6 cites·21 claims
- 4549US5835399AImprint compensation circuit for use in ferroelectric semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 10, 1998·11 cites·9 claims
- 4647US9899723B2Antenna module and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 20, 2018·0 cites·12 claims
- 4747US7075812B2Ferroelectric random access memory device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 11, 2006·0 cites·21 claims
- 4846US6847537B2Ferroelectric memory devices having a plate line control circuit and methods for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 25, 2005·3 cites·15 claims
- 4945US6504749B2Ferroelectric memory devices with memory cells in a row connected to different plate linesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 7, 2003·4 cites·24 claims
- 5035US2007035983A1Ferroelectric random access memory device and method for controlling writing sections thereforSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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