Inventor · disambiguated record
Kang-Woon Lee
Also filed as: LEE KANG W · LEE KANG-WOON
16 granted patents·2 pending applications·181 citations·filing 2005–2010
93Inventor score
Top patents by PatentIndex Score
18 records- 0196US7173844B2Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 6, 2007·65 cites·16 claims
- 0293US8300465B2Semiconductor and flash memory systemsJEON BYUNG-GIL·Filed 2010·Granted Oct 30, 2012·18 cites·14 claims
- 0391US7787297B2Flash memory device and flash memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·20 cites·9 claims
- 0486US7336549B2Redundancy circuit and repair method for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 26, 2008·18 cites·5 claims
- 0582US7616514B2Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·15 cites·14 claims
- 0675US7221578B2Ferroelectric random access memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 22, 2007·9 cites·16 claims
- 0770US7120045B2Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 10, 2006·4 cites·20 claims
- 0869US8467244B2Multi-chip semiconductor devices having non-volatile memory devices thereinJEON BYUNG-GIL·Filed 2010·Granted Jun 18, 2013·3 cites·15 claims
- 0967US7512028B2Integrated circuit feature definition using one-time-programmable (OTP) memoryAGERE SYSTEMS INC·Filed 2007·Granted Mar 31, 2009·5 cites·3 claims
- 1066US7617351B2Semiconductor memory device having RAM and ROM areasSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 10, 2009·3 cites·18 claims
- 1162US7345945B2Line driver circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·5 cites·20 claims
- 1260US7477536B2Ferroelectric random access memory device and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·4 cites·14 claims
- 1359US7626845B2Voltage programming switch for one-time-programmable (OTP) memoriesAGERE SYSTEMS INC·Filed 2006·Granted Dec 1, 2009·4 cites·41 claims
- 1459US7304882B2Circuits for driving FRAMSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·4 cites·16 claims
- 1557US7800931B2Ferroelectric random access memory apparatus and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·3 cites·19 claims
- 1649US7852697B2Integrated circuit feature definition using one-time-programmable (OTP) memoryAGERE SYSTEMS INC·Filed 2009·Granted Dec 14, 2010·1 cites·20 claims
- 1746US2009164831A1Controlled Default OTP Settings for ASICsBIRRU HEMANTH K·Filed 2007·Application pending·0 cites
- 1835US2007035983A1Ferroelectric random access memory device and method for controlling writing sections thereforSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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