Inventor · disambiguated record

Tsu Shih

Also filed as: SHIH TSU

59 granted patents·5 pending applications·1,538 citations·filing 1996–2003

99Inventor score

Technology areasH10P H10W B24B G03F B24D

Files withTAIWAN SEMICONDUCTOR MFG63

Top patents by PatentIndex Score

64 records

0197US6020263AMethod of recovering alignment marks after chemical mechanical polishing of tungstenTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 1, 2000·295 cites·18 claims
0295US6398627B1Slurry dispenser having multiple adjustable nozzlesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 4, 2002·57 cites·20 claims
0392US6118185ASegmented box-in-box for improving back end overlay measurementTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 12, 2000·80 cites·4 claims
0487US6736701B1Eliminate broken line damage of copper after CMPTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 18, 2004·29 cites·20 claims
0587US6429118B1Elimination of electrochemical deposition copper line damage for damascene processingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·40 cites·37 claims
0686US6518166B1Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·41 cites·19 claims
0786US6391780B1Method to prevent copper CMP dishingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 21, 2002·78 cites·20 claims
0886US6383935B1Method of reducing dishing and erosion using a sacrificial layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 7, 2002·45 cites·16 claims
0985US6443810B1Polishing platen equipped with guard ring for chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 3, 2002·30 cites·12 claims
1083US6372632B1Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·37 cites·33 claims
1180US6821896B1Method to eliminate via poison effectTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 23, 2004·29 cites·21 claims
1279US5933744AAlignment method for used in chemical mechanical polishing processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 3, 1999·53 cites·20 claims
1378US6495452B1Method to reduce capacitance for copper interconnect structuresTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 17, 2002·53 cites·9 claims
1478US6228760B1Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polishTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·46 cites·7 claims
1577US6458689B2Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polishTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 1, 2002·20 cites·3 claims
1676US6726535B2Method for preventing localized Cu corrosion during CMPTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 27, 2004·23 cites·20 claims
1775US6080656AMethod for forming a self-aligned copper structure with improved planarityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 27, 2000·46 cites·14 claims
1874US6227947B1Apparatus and method for chemical mechanical polishing metal on a semiconductor waferTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·35 cites·20 claims
1973US6682396B1Apparatus and method for linear polishingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 27, 2004·15 cites·10 claims
2073US6638328B1Bimodal slurry systemTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·14 cites·19 claims
2172US6767833B2Method for damascene reworkingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 27, 2004·14 cites·20 claims
2272US6634930B1Method and apparatus for preventing metal corrosion during chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 21, 2003·14 cites·7 claims
2372US5654234AMethod for forming a void-free tungsten-plug contact in the presence of a contact opening overhangTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Aug 5, 1997·42 cites·26 claims
2469US6599838B1Method for forming metal filled semiconductor features to improve a subsequent metal CMP processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 29, 2003·14 cites·20 claims
2567US6620725B1Reduction of Cu line damage by two-step CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 16, 2003·32 cites·10 claims
2667US5923996AMethod to protect alignment mark in CMP processTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jul 13, 1999·31 cites·12 claims
2765US6350680B1Pad alignment for AlCu pad for copper processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 26, 2002·12 cites·6 claims
2864US6501186B1Bond pad having variable density via support and method for fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 31, 2002·11 cites·15 claims
2963US6589852B1Method of replicating alignment marks for semiconductor wafer photolithographyTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 8, 2003·13 cites·20 claims
3062US6153526AMethod to remove residue in wolfram CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·25 cites·37 claims
3162US5709755AMethod for CMP cleaning improvementTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 20, 1998·27 cites·15 claims
3261US5858854AMethod for forming high contrast alignment marksTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 12, 1999·27 cites·20 claims
3360US6686284B2Chemical mechanical polisher equipped with chilled retaining ring and method of usingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 3, 2004·8 cites·17 claims
3460US6635211B2Reinforced polishing pad for linear chemical mechanical polishing and method for formingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 21, 2003·3 cites·10 claims
3559US6020249AMethod for photo alignment after CMP planarizationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 1, 2000·20 cites·11 claims
3658US5919714ASegmented box-in-box for improving back end overlay measurementTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 6, 1999·14 cites·13 claims
3756US6833323B2Method for forming patterned features at a semiconductor wafer periphery to prevent metal peelingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 21, 2004·11 cites·21 claims
3855US6361704B1Self stop aluminum pad for copper processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 26, 2002·6 cites·10 claims
3955US6358119B1Way to remove CU line damage after CU CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·15 cites·9 claims
4055US5827782AMultiple etch method for optimizing Inter-Metal Dielectric (IMD) spacer layer profileTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 27, 1998·20 cites·22 claims
4153US5972798APrevention of die loss to chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 26, 1999·16 cites·6 claims
4251US6602780B2Method for protecting sidewalls of etched openings to prevent via poisoningTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 5, 2003·4 cites·19 claims
4351US6544891B1Method to eliminate post-CMP copper flake defectTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 8, 2003·4 cites·32 claims
4449US6620034B2Way to remove Cu line damage after Cu CMPTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 16, 2003·4 cites·9 claims
4549US6515366B1Reduction of metal corrosion in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 4, 2003·3 cites·18 claims
4648US6638868B1Method for preventing or reducing anodic Cu corrosion during CMPTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·5 cites·14 claims
4747US6156660AMethod of planarization using dummy leadsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 5, 2000·13 cites·15 claims
4846US7153197B2Method for achieving uniform CU CMP polishingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 26, 2006·4 cites·20 claims
4945US6417106B1Underlayer liner for copper damascene in low k dielectricTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 9, 2002·11 cites·19 claims
5045US6383930B1Method to eliminate copper CMP residue of an alignment mark for damascene processesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 7, 2002·1 cites·18 claims

Showing the top 50 of 64 patent records by PatentIndex Score.

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