Inventor · disambiguated record
Peter A. Burke
Also filed as: BURKE PETER · BURKE PETER A · BURKE PETER AUSTIN
93 granted patents·13 pending applications·2,225 citations·filing 1992–2024
99Inventor score
Files withLSI LOGIC CORP21SEMICONDUCTOR COMPONENTS IND LLC18ADVANCED MICRO DEVICES INC13RODEL INC11SEMICONDUCTOR COMPONENTS IND9
Top patents by PatentIndex Score
106 records- 0197US6955937B1Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cellLSI LOGIC CORP·Filed 2004·Granted Oct 18, 2005·125 cites·21 claims
- 0297US6749485B1Hydrolytically stable grooved polishing pads for chemical mechanical planarizationRODEL INC·Filed 2000·Granted Jun 15, 2004·98 cites·31 claims
- 0397US6736709B1Grooved polishing pads for chemical mechanical planarizationRODEL INC·Filed 2000·Granted May 18, 2004·96 cites·28 claims
- 0497US6582283B2Polishing pads for chemical mechanical planarizationRODEL INC·Filed 2002·Granted Jun 24, 2003·71 cites·10 claims
- 0597US6454634B1Polishing pads for chemical mechanical planarizationRODEL INC·Filed 2000·Granted Sep 24, 2002·123 cites·48 claims
- 0696US11996476B2Methods and structures for contacting shield conductor in a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0795US6860802B1Polishing pads for chemical mechanical planarizationROHM AND HAAS ELECTRIC MATERIA·Filed 2000·Granted Mar 1, 2005·81 cites·22 claims
- 0893US11482616B2Methods and structures for contacting shield conductor in a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Oct 25, 2022·2 cites·20 claims
- 0993US6987059B1Method and structure for creating ultra low resistance damascene copper wiringLSI LOGIC CORP·Filed 2003·Granted Jan 17, 2006·70 cites·17 claims
- 1093US6969651B1Layout design and process to form nanotube cell for nanotube memory applicationsLSI LOGIC CORP·Filed 2004·Granted Nov 29, 2005·140 cites·17 claims
- 1192US7981757B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2010·Granted Jul 19, 2011·11 cites·11 claims
- 1292US7602027B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Oct 13, 2009·21 cites·4 claims
- 1392US5645469APolishing pad with radially extending tapered channelsADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 8, 1997·120 cites·49 claims
- 1491US5916855AChemical-mechanical polishing slurry formulation and method for tungsten and titanium thin filmsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·53 claims
- 1591US5268330AProcess for improving sheet resistance of an integrated circuit device gateIBM·Filed 1992·Granted Dec 7, 1993·131 cites·37 claims
- 1689US12051967B2Integrated transistor and resistor-diode-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Jul 30, 2024·1 cites·20 claims
- 1788US8648412B1Trench power field effect transistor device and methodBURKE PETER A·Filed 2012·Granted Feb 11, 2014·9 cites·20 claims
- 1887US6939800B1Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI LOGIC CORP·Filed 2002·Granted Sep 6, 2005·30 cites·7 claims
- 1986US12446257B2Method for forming transistor devices having source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·25 claims
- 2086US7427563B2Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI CORP·Filed 2005·Granted Sep 23, 2008·9 cites·6 claims
- 2186US7160805B1Inter-layer interconnection structure for large electrical connectionsLSI LOGIC CORP·Filed 2003·Granted Jan 9, 2007·41 cites·13 claims
- 2286US6648743B1Chemical mechanical polishing padLSI LOGIC CORP·Filed 2001·Granted Nov 18, 2003·30 cites·21 claims
- 2386US5782962ACleaning and polishing compositionLEE SARA CORP·Filed 1996·Granted Jul 21, 1998·59 cites·8 claims
- 2486US5356513APolishstop planarization method and structureIBM·Filed 1993·Granted Oct 18, 1994·79 cites·24 claims
- 2585US8642425B2Method of making an insulated gate semiconductor device and structureBURKE PETER A·Filed 2012·Granted Feb 4, 2014·14 cites·20 claims
- 2685US6699299B2Composition and method for polishing in metal CMPRODEL INC·Filed 2003·Granted Mar 2, 2004·34 cites·21 claims
- 2783US9245963B2Insulated gate semiconductor device structureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 26, 2016·5 cites·23 claims
- 2883US7196420B1Method and structure for creating ultra low resistance damascene copper wiringLSI LOGIC CORP·Filed 2005·Granted Mar 27, 2007·10 cites·11 claims
- 2983US5492594AChemical-mechanical polishing tool with end point measurement stationIBM·Filed 1994·Granted Feb 20, 1996·91 cites·11 claims
- 3082US6616717B2Composition and method for polishing in metal CMPRODEL INC·Filed 2001·Granted Sep 9, 2003·28 cites·22 claims
- 3182US6325705B2Chemical-mechanical polishing slurry that reduces wafer defects and polishing systemADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 4, 2001·11 cites·13 claims
- 3281US12414325B2Methods and structures for contacting shield conductor in a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 3381US8889532B2Method of making an insulated gate semiconductor device and structureBURKE PETER A·Filed 2011·Granted Nov 18, 2014·5 cites·22 claims
- 3480US7897462B2Method of manufacturing semiconductor component with gate and shield electrodes in trenchesSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 1, 2011·7 cites·15 claims
- 3580US6106661APolishing pad having a wear level indicator and system using the sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 22, 2000·48 cites·42 claims
- 3680US5510652APolishstop planarization structureIBM·Filed 1994·Granted Apr 23, 1996·54 cites·7 claims
- 3779US11996477B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted May 28, 2024·0 cites·23 claims
- 3879US7276441B1Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structuresLSI LOGIC CORP·Filed 2003·Granted Oct 2, 2007·20 cites·20 claims
- 3979US6602112B2Dissolution of metal particles produced by polishingRODEL INC·Filed 2001·Granted Aug 5, 2003·22 cites·15 claims
- 4079US6475069B1Control of removal rates in CMPRODEL INC·Filed 2000·Granted Nov 5, 2002·21 cites·9 claims
- 4179US6419553B2Methods for break-in and conditioning a fixed abrasive polishing padRODEL INC·Filed 2001·Granted Jul 16, 2002·19 cites·2 claims
- 4278US11158734B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 26, 2021·1 cites·22 claims
- 4377US7402770B2Nano structure electrode designLSI LOGIC CORP·Filed 2005·Granted Jul 22, 2008·10 cites·20 claims
- 4476US8043968B2Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structuresLSI LOGIC CORP·Filed 2010·Granted Oct 25, 2011·3 cites·11 claims
- 4576US6447373B1Chemical mechanical polishing slurries for metalRODEL INC·Filed 2000·Granted Sep 10, 2002·21 cites·31 claims
- 4675US7646077B2Methods and structure for forming copper barrier layers integral with semiconductor substrates structuresLSI CORP·Filed 2008·Granted Jan 12, 2010·3 cites·22 claims
- 4775US6642597B1Inter-layer interconnection structure for large electrical connectionsLSI LOGIC CORP·Filed 2002·Granted Nov 4, 2003·20 cites·17 claims
- 4874US11605734B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 4974US7829426B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Nov 9, 2010·4 cites·13 claims
- 5074US5934978AMethods of making and using a chemical-mechanical polishing slurry that reduces wafer defectsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·27 cites·34 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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