Inventor · disambiguated record
Jemmy Wen
Also filed as: WEN JEMMY
54 granted patents·1,202 citations·filing 1994–1999
99Inventor score
Files withUNITED MICROELECTRONICS CORP51UNITED INTEGRATED CIRCUITS CORP1UNITED MICROELECTRONICS CORPOR1UNITED MICROELTRONICS CORP1
Top patents by PatentIndex Score
54 records- 0196US5792697AMethod for fabricating a multi-stage ROMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 11, 1998·153 cites·11 claims
- 0295US5864164AMulti-stage ROM structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 26, 1999·100 cites·10 claims
- 0394US6064100AProduct for ROM components having a silicon controlled rectifier structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·93 cites·26 claims
- 0490US5831314ATrench-shaped read-only memory and its method of fabricationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Nov 3, 1998·59 cites·7 claims
- 0589US5904526AMethod of fabricating high density semiconductor read-only memory deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 18, 1999·56 cites·12 claims
- 0688US5943573AMethod of fabricating semiconductor read-only memory deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 24, 1999·65 cites·15 claims
- 0788US5843824ADiode-based semiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 1, 1998·66 cites·12 claims
- 0887US5821629ABuried structure SRAM cell and methods for fabricationUNITED MICROELECTRONICS CORP·Filed 1995·Granted Oct 13, 1998·78 cites·4 claims
- 0986US5907778AMethod of fabricating the high-density diode-based read-only memory deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted May 25, 1999·48 cites·13 claims
- 1085US5854111AROM device using a schuckly diodeUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 29, 1998·54 cites·18 claims
- 1173US5460987AMethod of making field effect transistor structure of a diving channel deviceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Oct 24, 1995·29 cites·13 claims
- 1272US5949116AMOS device having a source/drain region conforming to a conductive material filled French structure in a substrateUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 7, 1999·26 cites·8 claims
- 1369US5937280AMethod of manufacturing a ROMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 10, 1999·26 cites·10 claims
- 1468US5804484AMethod of fabricating multi-stage read-only memory semiconductor structural configurationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 8, 1998·25 cites·6 claims
- 1567US5786618AROM memory cell with non-uniform threshold voltageUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 28, 1998·23 cites·6 claims
- 1666US5882971AMethod of making multi-stage ROM structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Mar 16, 1999·26 cites·11 claims
- 1763US5574302AField effect transistor structure of a diving channel deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 12, 1996·19 cites·13 claims
- 1862US5825069AHigh-density semiconductor read-only memory deviceUNITED MICROELTRONICS CORP·Filed 1997·Granted Oct 20, 1998·19 cites·11 claims
- 1957US5851885AManufacturing method for ROM components having a silicon controlled rectifier structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 22, 1998·13 cites·31 claims
- 2056US5811337AMethod of fabricating a semiconductor read-only memory device for permanent storage of multi-level coded dataUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 22, 1998·12 cites·6 claims
- 2152US5744847APolysilicon trench and buried wall device structuresUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 28, 1998·14 cites·20 claims
- 2251US5891778AMethod of fabricating a semiconductor read-only memory device based on a silicon-on-insulation structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 6, 1999·13 cites·26 claims
- 2351US5812448ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 22, 1998·11 cites·6 claims
- 2450US5831312AElectrostic discharge protection device comprising a plurality of trenchesUNITED MICROELECTRONICS CORP·Filed 1996·Granted Nov 3, 1998·15 cites·4 claims
- 2549US6150198AMethod of fabricating semiconductor read-only memory device with reduced parastic capacitance between bit line and word lineUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 21, 2000·10 cites·5 claims
- 2649US5869863Amemory having a trench type gate structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 9, 1999·10 cites·14 claims
- 2747US5990527ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 23, 1999·7 cites·9 claims
- 2846US5866457ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 2, 1999·7 cites·26 claims
- 2946US5834819ASemiconductor read-only memory device for permanent storage of multi-level coded dataUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 10, 1998·7 cites·1 claims
- 3046US5716886AMethod of fabricating a high voltage metal-oxide semiconductor (MOS) deviceUNITED MICROELECTRONICS CORP·Filed 1996·Granted Feb 10, 1998·10 cites·11 claims
- 3145US5920100AMulti-stage ROM structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 6, 1999·9 cites·10 claims
- 3244US6001691AMethod of manufacturing a triple level ROMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 14, 1999·7 cites·10 claims
- 3344US5602049AMethod of fabricating a buried structure SRAM cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 11, 1997·12 cites·9 claims
- 3444US5554568APolysilicon trench and buried polysilicon wall device structuresUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 10, 1996·7 cites·13 claims
- 3543US5869373ANand-structured and amorphous silicon based read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 9, 1999·8 cites·30 claims
- 3642US6143610AMethod for fabricating high-density semiconductor read-only memory deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 7, 2000·6 cites·10 claims
- 3742US5910666AHigh-voltage metal-oxide semiconductor (MOS) deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 8, 1999·6 cites·8 claims
- 3842US5824585ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 20, 1998·9 cites·5 claims
- 3941US5962900AHigh-density diode-based read-only memory deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 5, 1999·5 cites·10 claims
- 4041US5946576AMethod of fabricating a semiconductor ready-only memory device used for permanent storage of multi-level coded dataUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 31, 1999·6 cites·8 claims
- 4141US5877055AMethod for fabricating multi-stage ROM structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Mar 2, 1999·5 cites·11 claims
- 4239US5933735ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 3, 1999·4 cites·14 claims
- 4339US5896311ASemiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1998·Granted Apr 20, 1999·4 cites·21 claims
- 4438US5786257AMethod of fabricating a LDD transistorUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 28, 1998·4 cites·7 claims
- 4537US5895242ARead-only memories and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 20, 1999·4 cites·21 claims
- 4636US5851884AStructure and manufacturing method for ROMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 22, 1998·3 cites·17 claims
- 4734US5950089AMethod of making read-only memory device having a silicon-on-insulator structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 7, 1999·3 cites·15 claims
- 4833US5843823AMethod for fabricating a multi-stage ROM structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 1, 1998·2 cites·11 claims
- 4933US5696009AHigh voltage metal-oxide semiconductor (MOS) fabrication methodUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 9, 1997·2 cites·9 claims
- 5032US5781467ADecoding method for ROM matrix having a silicon controlled rectifier structureUNITED INTEGRATED CIRCUITS CORP·Filed 1997·Granted Jul 14, 1998·2 cites·8 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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