Inventor · disambiguated record
Peter J. Zdebel
Also filed as: ZDEBEL PETER J
44 granted patents·1,378 citations·filing 1987–2013
98Inventor score
Top patents by PatentIndex Score
44 records- 0198US7253477B2Semiconductor device edge termination structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Aug 7, 2007·118 cites·23 claims
- 0298US7176524B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Feb 13, 2007·91 cites·20 claims
- 0396US7482220B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Jan 27, 2009·37 cites·11 claims
- 0496US7285823B2Superjunction semiconductor device structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 23, 2007·57 cites·18 claims
- 0596US7276747B2Semiconductor device having screening electrode and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 2, 2007·46 cites·16 claims
- 0696US7256119B2Semiconductor device having trench structures and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Aug 14, 2007·38 cites·20 claims
- 0796US5712501AGraded-channel semiconductor deviceMOTOROLA INC·Filed 1995·Granted Jan 27, 1998·187 cites·11 claims
- 0890US7902601B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 8, 2011·13 cites·19 claims
- 0989US8299560B2Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the sameLOECHELT GARY H·Filed 2010·Granted Oct 30, 2012·10 cites·21 claims
- 1089US7960781B2Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Jun 14, 2011·14 cites·17 claims
- 1187US8372716B2Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layerSEMICONDUCTOR COMPONENTS IND·Filed 2011·Granted Feb 12, 2013·8 cites·18 claims
- 1286US7446354B2Power semiconductor device having improved performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Nov 4, 2008·11 cites·14 claims
- 1386US6118171ASemiconductor device having a pedestal structure and method of makingMOTOROLA INC·Filed 1998·Granted Sep 12, 2000·65 cites·20 claims
- 1485US6953980B2Semiconductor filter circuit and methodSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Oct 11, 2005·37 cites·19 claims
- 1584US4837176AIntegrated circuit structures having polycrystalline electrode contacts and processMOTOROLA INC·Filed 1987·Granted Jun 6, 1989·81 cites·35 claims
- 1682US5886374AOptically sensitive device and methodMOTOROLA INC·Filed 1998·Granted Mar 23, 1999·68 cites·20 claims
- 1782US5372960AMethod of fabricating an insulated gate semiconductor deviceMOTOROLA INC·Filed 1994·Granted Dec 13, 1994·45 cites·22 claims
- 1882US5067002AIntegrated circuit structures having polycrystalline electrode contactsMOTOROLA INC·Filed 1989·Granted Nov 19, 1991·65 cites·20 claims
- 1979US7098509B2High energy ESD structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Aug 29, 2006·25 cites·30 claims
- 2079US5510648AInsulated gate semiconductor device and method of fabricatingMOTOROLA INC·Filed 1994·Granted Apr 23, 1996·41 cites·16 claims
- 2175USRE45365ESemiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrateSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Feb 10, 2015·2 cites·39 claims
- 2274US7420258B2Semiconductor device having trench structures and methodSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Sep 2, 2008·5 cites·18 claims
- 2373US5026663AMethod of fabricating a structure having self-aligned diffused junctionsMOTOROLA INC·Filed 1989·Granted Jun 25, 1991·39 cites·8 claims
- 2473US4876217AMethod of forming semiconductor structure isolation regionsMOTOROLA INC·Filed 1988·Granted Oct 24, 1989·42 cites·7 claims
- 2566US6809396B2Integrated circuit with a high speed narrow base width vertical PNP transistorSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Oct 26, 2004·14 cites·8 claims
- 2666US5004703AMultiple trench semiconductor structure methodMOTOROLA INC·Filed 1989·Granted Apr 2, 1991·30 cites·14 claims
- 2765US5108946AMethod of forming planar isolation regionsMOTOROLA INC·Filed 1990·Granted Apr 28, 1992·35 cites·21 claims
- 2863US6610143B2Method of manufacturing a semiconductor componentSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 26, 2003·11 cites·24 claims
- 2963US5154946ACMOS structure fabricationMOTOROLA INC·Filed 1991·Granted Oct 13, 1992·23 cites·22 claims
- 3061US7638385B2Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Dec 29, 2009·2 cites·27 claims
- 3156US6033231ASemiconductor device having a pedestal and method of formingMOTOROLA INC·Filed 1998·Granted Mar 7, 2000·19 cites·20 claims
- 3255USRE44547ESemiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2012·Granted Oct 22, 2013·0 cites·40 claims
- 3351US7768078B2Power semiconductor device having improved performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Aug 3, 2010·0 cites·18 claims
- 3451US5965930AHigh frequency bipolar transistor and method of forming the sameMOTOROLA INC·Filed 1997·Granted Oct 12, 1999·21 cites·24 claims
- 3551US4772566ASingle tub transistor means and methodMOTOROLA INC·Filed 1987·Granted Sep 20, 1988·14 cites·17 claims
- 3649US5818098ASemiconductor device having a pedestalMOTOROLA INC·Filed 1996·Granted Oct 6, 1998·14 cites·17 claims
- 3746US5028559AFabrication of devices having laterally isolated semiconductor regionsMOTOROLA INC·Filed 1989·Granted Jul 2, 1991·13 cites·27 claims
- 3845US5026665ASemiconductor device electrode methodMOTOROLA INC·Filed 1990·Granted Jun 25, 1991·10 cites·15 claims
- 3937US4740478AIntegrated circuit method using double implant dopingMOTOROLA INC·Filed 1987·Granted Apr 26, 1988·9 cites·22 claims
- 4036US5808362AInterconnect structure and method of formingMOTOROLA INC·Filed 1996·Granted Sep 15, 1998·4 cites·20 claims
- 4135US5070031AComplementary semiconductor region fabricationMOTOROLA INC·Filed 1990·Granted Dec 3, 1991·7 cites·21 claims
- 4233US5920095AShort channel field effect semiconductor device and method of makingMOTOROLA INC·Filed 1997·Granted Jul 6, 1999·3 cites·21 claims
- 4332US4905070ASemiconductor device exhibiting no degradation of low current gainMOTOROLA INC·Filed 1988·Granted Feb 27, 1990·3 cites·9 claims
- 4431US5920102ASemiconductor device having a decoupling capacitor and method of makingMOTOROLA INC·Filed 1997·Granted Jul 6, 1999·1 cites·27 claims
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