Inventor · disambiguated record
Michael Fliesler
Also filed as: FLIESLER MICHAEL · FLIESLER MICHAEL D · FLIESLER MICHAEL DAVID
12 granted patents·423 citations·filing 1995–2009
93Inventor score
Files withADVANCED MICRO DEVICES INC6KILOPASS TECHNOLOGY INC3KILOPASS TECHNOLOGIES INC2FLIESLER MICHAEL1
Top patents by PatentIndex Score
12 records- 0195US7173851B13.5 transistor non-volatile memory cell using gate breakdown phenomenaKILOPASS TECHNOLOGY INC·Filed 2005·Granted Feb 6, 2007·61 cites·7 claims
- 0292US6972986B2Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdownKILOPASS TECHNOLOGIES INC·Filed 2004·Granted Dec 6, 2005·79 cites·18 claims
- 0392US6940751B2High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdownKILOPASS TECHNOLOGIES INC·Filed 2004·Granted Sep 6, 2005·79 cites·14 claims
- 0489US5642311AOvererase correction for flash memory which limits overerase and prevents erase verify errorsADVANCED MICRO DEVICES INC·Filed 1995·Granted Jun 24, 1997·76 cites·5 claims
- 0586US7031209B2Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectricKILOPASS TECHNOLOGY INC·Filed 2004·Granted Apr 18, 2006·35 cites·21 claims
- 0683US6770938B1Diode fabrication for ESD/EOS protectionADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·40 cites·6 claims
- 0772US7042772B2Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectricKILOPASS TECHNOLOGY INC·Filed 2004·Granted May 9, 2006·20 cites·10 claims
- 0866US6395568B1Method and apparatus for achieving bond pad crater sensing and ESD protection integrated circuit productsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·11 cites·9 claims
- 0960US8271810B1Method and apparatus for dynamically detecting environmental conditions and adjusting drive strength in response to the detectingFLIESLER MICHAEL·Filed 2009·Granted Sep 18, 2012·5 cites·27 claims
- 1049US6900085B2ESD implant following spacer depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted May 31, 2005·4 cites·20 claims
- 1148US6238975B1Method for improving electrostatic discharge (ESD) robustnessADVANCED MICRO DEVICES INC·Filed 1998·Granted May 29, 2001·11 cites·55 claims
- 1244US6440789B1Photoresist spacer process simplification to eliminate the standard polysilicon or oxide spacer process for flash memory circuitsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 27, 2002·2 cites·3 claims
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