Inventor · disambiguated record
Yosiaki Hisamune
Also filed as: HISAMUNE YOSIAKI
12 granted patents·1 pending application·507 citations·filing 1996–2002
93Inventor score
Files withNEC CORP13
Top patents by PatentIndex Score
13 records- 0196US6010946ASemiconductor device with isolation insulating film tapered and method of manufacturing the sameNEC CORP·Filed 1997·Granted Jan 4, 2000·245 cites·19 claims
- 0287US6214669B1Single-chip contact-less read-only memory (ROM) device and the method for fabricating the deviceNEC CORP·Filed 1998·Granted Apr 10, 2001·51 cites·6 claims
- 0387US5929480ANonvolatile semiconductor memory device having first and second floating gatesNEC CORP·Filed 1996·Granted Jul 27, 1999·69 cites·5 claims
- 0480US6121670ASingle-chip contact-less read-only memory (ROM) device and the method for fabricating the deviceNEC CORP·Filed 1997·Granted Sep 19, 2000·36 cites·19 claims
- 0577US5946240ANonvolatile semiconductor memory device and method of manufacturing the sameNEC CORP·Filed 1997·Granted Aug 31, 1999·37 cites·7 claims
- 0667US5923978ANonvolatile semiconductor memory and methods for manufacturing and using the sameNEC CORP·Filed 1997·Granted Jul 13, 1999·24 cites·2 claims
- 0757US5891775AMethod of making nonvolatile semiconductor device having sidewall split gate for compensating for over-erasing operationNEC CORP·Filed 1997·Granted Apr 6, 1999·16 cites·12 claims
- 0848US6057574AContactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulatorsNEC CORP·Filed 1997·Granted May 2, 2000·8 cites·10 claims
- 0944US5863822AMethod of making non-volatile semiconductor memory devices having large capacitance between floating and control gatesNEC CORP·Filed 1997·Granted Jan 26, 1999·9 cites·4 claims
- 1041US6414352B2Semiconductor device having an electronically insulating layer including a nitride layerNEC CORP·Filed 1998·Granted Jul 2, 2002·5 cites·2 claims
- 1137US6040234AMethod of manufacturing semiconductor device without bird beak effectNEC CORP·Filed 1997·Granted Mar 21, 2000·7 cites·15 claims
- 1236US2002125526A1Semiconductor devices and processes for making themNEC CORP·Filed 2002·Application pending·0 cites
- 1335US6274432B1Method of making contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulatorsNEC CORP·Filed 2000·Granted Aug 14, 2001·0 cites·14 claims
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