Inventor · disambiguated record
Ioan Lucian Prejbeanu
Also filed as: PREJBEANU IOAN LUCIAN
32 granted patents·2 pending applications·284 citations·filing 2006–2023
96Inventor score
Files withCROCUS TECHNOLOGY SA17PREJBEANU IOAN LUCIAN6COMMISSARIAT ENERGIE ATOMIQUE5LOMBARD LUCIEN2CENTRE NAT RECH SCIENT1
Top patents by PatentIndex Score
34 records- 0198US8385107B2Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing currentCROCUS TECHNOLOGY SA·Filed 2010·Granted Feb 26, 2013·55 cites·10 claims
- 0296US8609439B2Magnetic tunnel junction comprising a polarizing layerPREJBEANU IOAN LUCIAN·Filed 2012·Granted Dec 17, 2013·44 cites·8 claims
- 0396US8102701B2Magnetic memory with a thermally assisted writing procedurePREJBEANU IOAN LUCIAN·Filed 2010·Granted Jan 24, 2012·49 cites·15 claims
- 0496US7411817B2Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the sameCENTRE NAT RECH SCIENT·Filed 2006·Granted Aug 12, 2008·51 cites·16 claims
- 0586US8064245B2Magnetic random access memory with an elliptical magnetic tunnel junctionPREJBEANU IOAN LUCIAN·Filed 2009·Granted Nov 22, 2011·18 cites·24 claims
- 0685US8228716B2Magnetic element with thermally assisted writingNOZIERES JEAN-PIERRE·Filed 2010·Granted Jul 24, 2012·10 cites·11 claims
- 0783US8717812B2Thermally assisted magnetic random access memory element with improved enduranceMACKAY KENNETH·Filed 2011·Granted May 6, 2014·7 cites·11 claims
- 0882US8659938B2Multibit magnetic random access memory cell with improved read marginPREJBEANU IOAN LUCIAN·Filed 2011·Granted Feb 25, 2014·8 cites·15 claims
- 0977US8743597B2Self-referenced magnetic random access memory element comprising a synthetic storage layerCROCUS TECHNOLOGY SA·Filed 2012·Granted Jun 3, 2014·4 cites·11 claims
- 1077US8514618B2Magnetic random access memory cell with improved dispersion of the switching fieldLOMBARD LUCIEN·Filed 2012·Granted Aug 20, 2013·7 cites·12 claims
- 1177US7957181B2Magnetic tunnel junction magnetic memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jun 7, 2011·10 cites·34 claims
- 1270US9754653B2Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cellCROCUS TECHNOLOGY SA·Filed 2013·Granted Sep 5, 2017·4 cites·10 claims
- 1367US8391053B2Magnetic memory with a thermally assisted writing procedure and reduced writing fieldPREJBEANU IOAN LUCIAN·Filed 2010·Granted Mar 5, 2013·4 cites·10 claims
- 1465US9324936B2Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signalCROCUS TECHNOLOGY SA·Filed 2013·Granted Apr 26, 2016·2 cites·10 claims
- 1564US2025231259A1Magnetorestistive sensor sensitive to an out-of-plane magnetic fieldCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1662US9583695B2Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signalCROCUS TECHNOLOGY SA·Filed 2013·Granted Feb 28, 2017·2 cites·9 claims
- 1762US8503225B2Multibit cell with synthetic storage layerLOMBARD LUCIEN·Filed 2012·Granted Aug 6, 2013·3 cites·15 claims
- 1857US10002973B2Magnetic tunnel junction with an improved tunnel barrierPREJBEANU IOAN LUCIAN·Filed 2012·Granted Jun 19, 2018·1 cites·12 claims
- 1956US9396782B2Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespanCROCUS TECHNOLOGY SA·Filed 2013·Granted Jul 19, 2016·2 cites·3 claims
- 2054US12292486B2Method for measuring an external magnetic field by at least one magnetic memory pointCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted May 6, 2025·0 cites·15 claims
- 2153US9331268B2MRAM element having improved data retention and low writing temperatureCROCUS TECHNOLOGY SA·Filed 2013·Granted May 3, 2016·1 cites·10 claims
- 2250US9431601B2Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devicesCROCUS TECHNOLOGY SA·Filed 2013·Granted Aug 30, 2016·0 cites·7 claims
- 2348US9886989B2Low power magnetic random access memory cellDUCRUET CLARISSE·Filed 2012·Granted Feb 6, 2018·2 cites·15 claims
- 2448US8885397B2Self-referenced MRAM cell with optimized reliabilityCROCUS TECHNOLOGY SA·Filed 2012·Granted Nov 11, 2014·0 cites·9 claims
- 2547US12100437B2Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devicesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 24, 2024·0 cites·10 claims
- 2646US12477951B2Method for manufacturing a spintronic device comprising a thick active magnetic layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Nov 18, 2025·0 cites·9 claims
- 2737US9728711B2Thermally-assisted MRAM cells with improved reliability at writingCROCUS TECHNOLOGY SA·Filed 2014·Granted Aug 8, 2017·0 cites·9 claims
- 2837US9336846B2MRAM element with low writing temperatureCROCUS TECHNOLOGY SA·Filed 2014·Granted May 10, 2016·0 cites·12 claims
- 2937US9165626B2Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layersCROCUS TECHNOLOGY SA·Filed 2012·Granted Oct 20, 2015·0 cites·9 claims
- 3037US8971102B2MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field currentCROCUS TECHNOLOGY SA·Filed 2013·Granted Mar 3, 2015·0 cites·6 claims
- 3137US8797793B2Self-referenced MRAM element with linear sensing signalCROCUS TECHNOLOGY SA·Filed 2013·Granted Aug 5, 2014·0 cites·8 claims
- 3236US9679624B2Magnetic random access memory (MRAM) cell with low power consumptionCROCUS TECHNOLOGY SA·Filed 2013·Granted Jun 13, 2017·0 cites·11 claims
- 3336US8988935B2Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operationCROCUS TECHNOLOGY SA·Filed 2012·Granted Mar 24, 2015·0 cites·18 claims
- 3434US2013077390A1Magnetic random access memory (mram) cell, method for writing and reading the mram cell using a self-referenced read operationCROCUS TECHNOLOGY SA·Filed 2012·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →