Inventor · disambiguated record
Fumitaka Kume
Also filed as: KUME FUMITAKA
14 granted patents·5 pending applications·11 citations·filing 2005–2020
86Inventor score
Top patents by PatentIndex Score
19 records- 0180US9193596B2Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline siliconNETSU SHIGEYOSHI·Filed 2010·Granted Nov 24, 2015·2 cites·20 claims
- 0273US11440804B2Process for producing polycrystalline silicon massSHINETSU CHEMICAL CO·Filed 2018·Granted Sep 13, 2022·0 cites·11 claims
- 0369US9017482B2System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline siliconNETSU SHIGEYOSHI·Filed 2010·Granted Apr 28, 2015·2 cites·12 claims
- 0466US9006002B2Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rodNETSU SHIGEYOSHI·Filed 2011·Granted Apr 14, 2015·2 cites·20 claims
- 0564US7811464B2Preferential etching method and silicon single crystal substrateSHINETSU HANDOTAI KK·Filed 2006·Granted Oct 12, 2010·2 cites·8 claims
- 0658US7713851B2Method of manufacturing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2005·Granted May 11, 2010·1 cites·4 claims
- 0757US8793853B2Core wire holder for producing polycrystalline silicon and method for producing polycrystalline siliconNETSU SHIGEYOSHI·Filed 2010·Granted Aug 5, 2014·1 cites·17 claims
- 0856US2012175613A1Polycrystalline silicon mass and process for producing polycrystalline silicon massNETSU SHIGEYOSHI·Filed 2010·Application pending·0 cites
- 0955US9562289B2Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rodNETSU SHIGEYOSHI·Filed 2010·Granted Feb 7, 2017·0 cites·6 claims
- 1053US10073126B2C-V characteristic measurement system and method for measuring C-V characteristicsSHINETSU HANDOTAI KK·Filed 2013·Granted Sep 11, 2018·1 cites·6 claims
- 1153US2015247239A1Carbon electrode and apparatus for manufacturing polycrystalline silicon rodSHINETSU CHEMICAL CO·Filed 2015·Application pending·0 cites
- 1247US10366882B2System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline siliconSHINETSU CHEMICAL CO·Filed 2015·Granted Jul 30, 2019·0 cites·7 claims
- 1346US7867803B2Method of fabricating light emitting device and compound semiconductor wafer and light emitting deviceSHINETSU HANDOTAI KK·Filed 2007·Granted Jan 11, 2011·0 cites·8 claims
- 1443US2022146444A1Method for measuring resistivity of silicon single crystalSHINETSU HANDOTAI KK·Filed 2020·Application pending·0 cites
- 1539US10720366B2Method for manufacturing resistivity standard sample and method for measuring resistivity of epitaxial waferSHINETSU HANDOTAI KK·Filed 2017·Granted Jul 21, 2020·0 cites·10 claims
- 1638US8963070B2Method for measuring carbon concentration in polycrystalline siliconOKADA JUNICHI·Filed 2012·Granted Feb 24, 2015·0 cites·2 claims
- 1738US2008038526A1Silicon Epitaxial Wafer And Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 1838US2007269338A1Silicon Epitaxial Wafer and Manufacturing Method ThereofSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 1937US9287111B2Ozone gas generation processing apparatus, method of forming silicon oxide film, and method for evaluating silicon single crystal waferKUME FUMITAKA·Filed 2012·Granted Mar 15, 2016·0 cites·7 claims
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