Inventor · disambiguated record
Dinh Dang
Also filed as: DANG DINH
18 granted patents·1 pending application·278 citations·filing 1991–2019
94Inventor score
Top patents by PatentIndex Score
19 records- 0197US8722445B2Planar cavity MEMS and related structures, methods of manufacture and design structuresDANG DINH·Filed 2010·Granted May 13, 2014·38 cites·27 claims
- 0296US8722508B2Low harmonic RF switch in SOIIBM·Filed 2013·Granted May 13, 2014·23 cites·18 claims
- 0396US8674472B2Low harmonic RF switch in SOIBOTULA ALAN B·Filed 2010·Granted Mar 18, 2014·25 cites·19 claims
- 0495US10512898B2Layered automotive catalyst compositesBASF CORP·Filed 2016·Granted Dec 24, 2019·27 cites·25 claims
- 0587US5776423ATrimetallic zeolite catalyst and method of NOx abatement using the sameENGELHARD CORP·Filed 1996·Granted Jul 7, 1998·63 cites·3 claims
- 0686US9406472B2Planar cavity MEMS and related structures, methods of manufacture and design structuresDANG DINH·Filed 2010·Granted Aug 2, 2016·2 cites·19 claims
- 0780US5498313ASymmetrical etching ring with gas controlIBM·Filed 1993·Granted Mar 12, 1996·41 cites·3 claims
- 0865US8912574B2Device isolation with improved thermal conductivityDAHLSTROM MATTIAS E·Filed 2010·Granted Dec 16, 2014·2 cites·14 claims
- 0964US5346535AUse of crystalline molecular sieves containing charged octahedral sites in removing volatile organic compounds from a mixture of the sameENGELHARD CORP·Filed 1991·Granted Sep 13, 1994·29 cites·7 claims
- 1061US7675121B2SOI substrate contact with extended silicide areaIBM·Filed 2007·Granted Mar 9, 2010·2 cites·16 claims
- 1160US7893479B2Deep trench in a semiconductor structureIBM·Filed 2009·Granted Feb 22, 2011·1 cites·7 claims
- 1260US5968861ATrimetallic zeolite catalyst and method of NOx abatement using the sameENGELHARD CORP·Filed 1998·Granted Oct 19, 1999·20 cites·2 claims
- 1356US12179186B2Layered catalysts composition and catalytic article and methods of manufacturing and using the sameBASF MOBILE EMISSIONS CATALYSTS LLC·Filed 2019·Granted Dec 31, 2024·0 cites·20 claims
- 1456US9564508B2Device isolation with improved thermal conductivityIBM·Filed 2014·Granted Feb 7, 2017·0 cites·18 claims
- 1556US7939896B2SOI substrate contact with extended silicide areaIBM·Filed 2009·Granted May 10, 2011·1 cites·10 claims
- 1653US7101806B2Deep trench formation in semiconductor device fabricationIBM·Filed 2004·Granted Sep 5, 2006·4 cites·12 claims
- 1749US7573085B2Deep trench formation in semiconductor device fabricationIBM·Filed 2006·Granted Aug 11, 2009·0 cites·1 claims
- 1841US9577023B2Metal wires of a stacked inductorGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 21, 2017·0 cites·14 claims
- 1938US2009093092A1Soi substrate contact with extended silicide areaDANG DINH·Filed 2007·Application pending·0 cites
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