Inventor · disambiguated record
Dana Lee
Also filed as: LEE DANA · LEE DANA R
135 granted patents·11 pending applications·3,227 citations·filing 1991–2022
99Inventor score
Files withSILICON STORAGE TECH INC36SANDISK TECHNOLOGIES INC32SANDISK CORP18SANDISK TECHNOLOGIES LLC14LEE DANA10
Top patents by PatentIndex Score
146 records- 0199US7869273B2Reducing the impact of interference during programmingSANDISK CORP·Filed 2007·Granted Jan 11, 2011·480 cites·49 claims
- 0298US10056399B2Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 21, 2018·24 cites·20 claims
- 0398US9460799B1Recovery of partially programmed block in non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 4, 2016·45 cites·20 claims
- 0498USD763293SDisplay screen with graphical user interfaceMICROSOFT CORP·Filed 2015·Granted Aug 9, 2016·114 cites·1 claims
- 0598US8750042B2Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failuresSHARON ERAN·Filed 2011·Granted Jun 10, 2014·69 cites·22 claims
- 0697US9053808B2Flash memory with targeted read scrub algorithmSPROUSE STEVEN T·Filed 2012·Granted Jun 9, 2015·343 cites·17 claims
- 0797US8432732B2Detection of word-line leakage in memory arraysLI YAN·Filed 2010·Granted Apr 30, 2013·46 cites·7 claims
- 0897US8406053B1On chip dynamic read for non-volatile storageDUTTA DEEPANSHU·Filed 2011·Granted Mar 26, 2013·35 cites·19 claims
- 0997US7433241B2Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line dataSANDISK CORP·Filed 2006·Granted Oct 7, 2008·66 cites·34 claims
- 1096US11482531B2Three-dimensional memory device including multi-bit charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 25, 2022·4 cites·13 claims
- 1196US9548124B1Word line dependent programming in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 17, 2017·29 cites·20 claims
- 1296US9036417B2On chip dynamic read level scan and error detection for nonvolatile storageSANDISK TECHNOLOGIES INC·Filed 2013·Granted May 19, 2015·30 cites·17 claims
- 1396US8902652B1Systems and methods for lower page writesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 2, 2014·26 cites·22 claims
- 1496US8576624B2On chip dynamic read for non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 5, 2013·25 cites·21 claims
- 1596US7463531B2Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltagesSANDISK CORP·Filed 2006·Granted Dec 9, 2008·49 cites·25 claims
- 1696US7450430B2Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltagesSANDISK CORP·Filed 2006·Granted Nov 11, 2008·53 cites·23 claims
- 1795US9785357B2Systems and methods for sampling data at a non-volatile memory systemSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 10, 2017·35 cites·20 claims
- 1895US9633738B1Accelerated physical secure eraseSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 25, 2017·25 cites·21 claims
- 1995US8687421B2Scrub techniques for use with dynamic readAVILA CHRIS·Filed 2012·Granted Apr 1, 2014·44 cites·21 claims
- 2095US8321727B2System and method responsive to a rate of change of a performance parameter of a memoryD ABREU MANUEL ANTONIO·Filed 2009·Granted Nov 27, 2012·39 cites·38 claims
- 2194US8873288B2Simultaneous sensing of multiple wordlines and detection of NAND failuresSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 28, 2014·16 cites·6 claims
- 2294US8644075B2Ramping pass voltage to enhance channel boost in memory deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 4, 2014·20 cites·8 claims
- 2393US9552171B2Read scrub with adaptive counter managementSANDISK TECHNOLOGIES LLC·Filed 2014·Granted Jan 24, 2017·21 cites·20 claims
- 2493US9053810B2Defect or program disturb detection with full data recovery capabilitySANDISK TECHNOLOGIES INC·Filed 2013·Granted Jun 9, 2015·17 cites·20 claims
- 2593US8472266B2Reducing neighbor read disturbKHANDELWAL ANUBHAV·Filed 2011·Granted Jun 25, 2013·31 cites·23 claims
- 2693US7907449B2Two pass erase for non-volatile storageSANDISK CORP·Filed 2009·Granted Mar 15, 2011·30 cites·29 claims
- 2793US7468918B2Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line dataSANDISK CORP·Filed 2006·Granted Dec 23, 2008·33 cites·32 claims
- 2893US6329685B1Self aligned method of forming a semiconductor memory array of floating gate memory cells and a memory array made therebySILICON STORAGE TECH INC·Filed 1999·Granted Dec 11, 2001·83 cites·34 claims
- 2992US9978456B2Techniques for reducing read disturb in partially written blocks of non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2014·Granted May 22, 2018·16 cites·28 claims
- 3092US9805809B1State-dependent read compensationSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·14 cites·18 claims
- 3192US7247907B2Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Jul 24, 2007·24 cites·18 claims
- 3292US7050316B1Differential non-volatile content addressable memory cell and array using phase changing resistor storage elementsSILICON STORAGE TECH INC·Filed 2004·Granted May 23, 2006·78 cites·10 claims
- 3392US6958273B2Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate, pointed floating gate and pointed channel region, and a memory array made therebySILICON STORAGE TECH INC·Filed 2003·Granted Oct 25, 2005·58 cites·41 claims
- 3492US6806531B1Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formationSILICON STORAGE TECH INC·Filed 2003·Granted Oct 19, 2004·57 cites·24 claims
- 3591US11810628B2Non-volatile memory with efficient testing during eraseSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 7, 2023·2 cites·20 claims
- 3691US10564900B2Temperature variation compensationWESTERN DIGITAL TECH INC·Filed 2018·Granted Feb 18, 2020·9 cites·20 claims
- 3791US9710325B2On chip dynamic read level scan and error detection for nonvolatile storageSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 18, 2017·11 cites·20 claims
- 3891US9224494B2Erase speed adjustment for endurance of non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 29, 2015·13 cites·19 claims
- 3991US8743615B2Read compensation for partially programmed blocks of non-volatile storageLEE DANA·Filed 2011·Granted Jun 3, 2014·16 cites·29 claims
- 4091US7800956B2Programming algorithm to reduce disturb with minimal extra time penaltySANDISK CORP·Filed 2008·Granted Sep 21, 2010·26 cites·26 claims
- 4191US7764547B2Regulation of source potential to combat cell source IR dropSANDISK CORP·Filed 2007·Granted Jul 27, 2010·23 cites·18 claims
- 4291US7307308B2Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formationSILICON STORAGE TECH INC·Filed 2004·Granted Dec 11, 2007·61 cites·20 claims
- 4391US6525371B2Self-aligned non-volatile random access memory cell and process to make the sameIBM·Filed 1999·Granted Feb 25, 2003·98 cites·19 claims
- 4491US5097528ASystem for integrating telephony data with data processing systemsIBM·Filed 1991·Granted Mar 17, 1992·284 cites·65 claims
- 4590US11081190B1Reverse sensing for data recovery in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 3, 2021·3 cites·20 claims
- 4690US10355007B2Three-dimensional memory structure having a back gate electrodeSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 16, 2019·6 cites·18 claims
- 4790US9548130B2Non-volatile memory with prior state sensingSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 17, 2017·10 cites·21 claims
- 4890US7439572B2Stacked gate memory cell with erase to gate, array, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Oct 21, 2008·15 cites·1 claims
- 4989US9552885B2Partial block erase for open block reading in non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 24, 2017·11 cites·27 claims
- 5089US8526233B2Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensationHEMINK GERRIT JAN·Filed 2011·Granted Sep 3, 2013·11 cites·22 claims
Showing the top 50 of 146 patent records by PatentIndex Score.
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