Inventor · disambiguated record
Hamza Yilmaz
Also filed as: YILMAZ HAMZA
266 granted patents·22 pending applications·4,261 citations·filing 1985–2024
99Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR105YILMAZ HAMZA28SILICONIX INC26IPOWER SEMICONDUCTOR21FAIRCHILD SEMICONDUCTOR20
Top patents by PatentIndex Score
288 records- 0198US9312381B1Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Apr 12, 2016·17 cites·20 claims
- 0298US8299494B2Nanotube semiconductor devicesYILMAZ HAMZA·Filed 2009·Granted Oct 30, 2012·69 cites·23 claims
- 0398US7504306B2Method of forming trench gate field effect transistor with recessed mesasFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·89 cites·13 claims
- 0498US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0598US7393749B2Charge balance field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jul 1, 2008·86 cites·14 claims
- 0698US5597765AMethod for making termination structure for power MOSFETSILICONIX INC·Filed 1995·Granted Jan 28, 1997·233 cites·11 claims
- 0798US5168331APower metal-oxide-semiconductor field effect transistorSILICONIX INC·Filed 1991·Granted Dec 1, 1992·236 cites·39 claims
- 0898US4682195AInsulated gate device with configured emitter contact padGEN ELECTRIC·Filed 1985·Granted Jul 21, 1987·206 cites·1 claims
- 0997US9190512B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 17, 2015·20 cites·9 claims
- 1097US8809948B1Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·34 cites·18 claims
- 1197US8753935B1High frequency switching MOSFETs with low output capacitance using a depletable P-shieldBOBDE MADHUR·Filed 2012·Granted Jun 17, 2014·33 cites·20 claims
- 1297US8680613B2Termination design for high voltage deviceGUAN LINGPENG·Filed 2012·Granted Mar 25, 2014·29 cites·7 claims
- 1397US7625799B2Method of forming a shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 1, 2009·26 cites·18 claims
- 1497US7521773B2Power device with improved edge terminationFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Apr 21, 2009·45 cites·24 claims
- 1597US7514322B2Shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Apr 7, 2009·39 cites·18 claims
- 1697US7323386B2Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristicsYILMAZ HAMZA·Filed 2006·Granted Jan 29, 2008·45 cites·12 claims
- 1797US5426328ABICDMOS structuresSILICONIX INC·Filed 1994·Granted Jun 20, 1995·143 cites·14 claims
- 1897US5374569AMethod for forming a BiCDMOSSILICONIX INC·Filed 1993·Granted Dec 20, 1994·119 cites·15 claims
- 1996US9502554B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Nov 22, 2016·12 cites·12 claims
- 2096US9356022B2Semiconductor device with termination structure for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 31, 2016·11 cites·23 claims
- 2196US8951867B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Feb 10, 2015·22 cites·26 claims
- 2296US8946816B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 3, 2015·20 cites·14 claims
- 2396US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 2496US8575685B2Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply pathBOBDE MADHUR·Filed 2011·Granted Nov 5, 2013·22 cites·19 claims
- 2596US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 2696US7910486B2Method for forming nanotube semiconductor devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Mar 22, 2011·45 cites·26 claims
- 2796US7489011B2Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristicsYILMAZ HAMZA·Filed 2005·Granted Feb 10, 2009·36 cites·5 claims
- 2895US11538911B2Shielded trench devicesIPOWER SEMICONDUCTOR·Filed 2020·Granted Dec 27, 2022·4 cites·25 claims
- 2995US9852910B2Vertical power transistor with dual buffer regionsMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Dec 26, 2017·7 cites·13 claims
- 3095US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 3195US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 3295US9252264B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 2, 2016·13 cites·12 claims
- 3395US9171949B1Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·17 cites·14 claims
- 3495US9136380B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·18 cites·10 claims
- 3595US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 3695US8592895B2Field effect transistor with source, heavy body region and shielded gateFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Nov 26, 2013·12 cites·20 claims
- 3795US8575695B2Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diodeBOBDE MADHUR·Filed 2009·Granted Nov 5, 2013·36 cites·18 claims
- 3895US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 3995US5614751AEdge termination structure for power MOSFETSILICONIX INC·Filed 1996·Granted Mar 25, 1997·134 cites·16 claims
- 4095US5474943AMethod for fabricating a short channel trenched DMOS transistorSILICONIX INC·Filed 1994·Granted Dec 12, 1995·116 cites·6 claims
- 4194US10998438B2Self-aligned trench MOSFET structures and methodsYILMAZ HAMZA·Filed 2019·Granted May 4, 2021·9 cites·21 claims
- 4294US9653383B2Semiconductor device with thick bottom metal and preparation method thereofALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 16, 2017·15 cites·4 claims
- 4394US9450088B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·8 cites·35 claims
- 4494US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 4594US9105494B2Termination trench for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Aug 11, 2015·14 cites·27 claims
- 4694US8710585B1High voltage fast recovery trench diodeHU JUN·Filed 2013·Granted Apr 29, 2014·16 cites·21 claims
- 4794US8642385B2Wafer level package structure and the fabrication method thereofXUE YAN XUN·Filed 2011·Granted Feb 4, 2014·22 cites·29 claims
- 4894US8581376B2Stacked dual chip package and method of fabricationYILMAZ HAMZA·Filed 2010·Granted Nov 12, 2013·22 cites·23 claims
- 4994US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 5094US7943989B2Nano-tube MOSFET technology and devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted May 17, 2011·25 cites·18 claims
Showing the top 50 of 288 patent records by PatentIndex Score.
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