Inventor · disambiguated record
Daniel Calafut
Also filed as: CALAFUT DANIEL · CALAFUT DANIEL S
56 granted patents·5 pending applications·1,321 citations·filing 1996–2017
99Inventor score
Files withFAIRCHILD SEMICONDUCTOR25ALPHA & OMEGA SEMICONDUCTOR19YILMAZ HAMZA4NAT SEMICONDUCTOR CORP3YEDINAK JOSEPH A3
Top patents by PatentIndex Score
61 records- 0198US7504306B2Method of forming trench gate field effect transistor with recessed mesasFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·89 cites·13 claims
- 0298US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0398US7393749B2Charge balance field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jul 1, 2008·86 cites·14 claims
- 0497US9190512B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 17, 2015·20 cites·9 claims
- 0597US8809948B1Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·34 cites·18 claims
- 0697US7625793B2Power MOS device with improved gate charge performanceFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Dec 1, 2009·59 cites·8 claims
- 0797US7625799B2Method of forming a shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 1, 2009·26 cites·18 claims
- 0897US7521773B2Power device with improved edge terminationFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Apr 21, 2009·45 cites·24 claims
- 0997US7514322B2Shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Apr 7, 2009·39 cites·18 claims
- 1097US6534825B2Power MOS device with improved gate charge performanceFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Mar 18, 2003·101 cites·11 claims
- 1196US9356022B2Semiconductor device with termination structure for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 31, 2016·11 cites·23 claims
- 1296US8951867B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Feb 10, 2015·22 cites·26 claims
- 1396US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 1496US8174067B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted May 8, 2012·29 cites·20 claims
- 1596US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 1695US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 1795US9136380B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·18 cites·10 claims
- 1895US8592895B2Field effect transistor with source, heavy body region and shielded gateFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Nov 26, 2013·12 cites·20 claims
- 1995US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 2095US6461918B1Power MOS device with improved gate charge performanceFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Oct 8, 2002·108 cites·11 claims
- 2194US9450088B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·8 cites·35 claims
- 2294US9105494B2Termination trench for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Aug 11, 2015·14 cites·27 claims
- 2394US8563377B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2012·Granted Oct 22, 2013·11 cites·19 claims
- 2494US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 2593US6673680B2Field coupled power MOSFET bus architecture using trench technologyFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jan 6, 2004·66 cites·6 claims
- 2692US8963212B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Feb 24, 2015·8 cites·23 claims
- 2792US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 2891US8742401B2Field effect transistor with gated and non-gated trenchesFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Jun 3, 2014·6 cites·21 claims
- 2991US5602046AIntegrated zener diode protection structures and fabrication methods for DMOS power devicesNAT SEMICONDUCTOR CORP·Filed 1996·Granted Feb 11, 1997·84 cites·24 claims
- 3090US9412733B2MOSFET with integrated schottky diodeALPHA & OMEGA SEMICONDUCTOR INCORPORATED·Filed 2013·Granted Aug 9, 2016·8 cites·15 claims
- 3189US9484453B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 1, 2016·5 cites·10 claims
- 3289US9281394B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·6 cites·19 claims
- 3388US8193581B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Jun 5, 2012·10 cites·16 claims
- 3487US7768034B2Tapered voltage polysilicon diode electrostatic discharge circuit for power MOSFETs and ICsFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Aug 3, 2010·15 cites·13 claims
- 3586US9530885B2Normally on high voltage switchALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Dec 27, 2016·4 cites·20 claims
- 3686US9082790B2Normally on high voltage switchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jul 14, 2015·6 cites·11 claims
- 3786US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 3886US8829603B2Shielded gate trench MOSFET packageLUI SIK·Filed 2011·Granted Sep 9, 2014·8 cites·17 claims
- 3986US5767550AIntegrated zener diode overvoltage protection structures in power DMOS device applicationsNAT SEMICONDUCTOR CORP·Filed 1996·Granted Jun 16, 1998·56 cites·12 claims
- 4085US6396102B1Field coupled power MOSFET bus architecture using trench technologyFAIRCHILD SEMICONDUCTOR·Filed 1998·Granted May 28, 2002·51 cites·7 claims
- 4184US9190478B2Method for forming dual oxide trench gate power MOSFET using oxide filled trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Nov 17, 2015·6 cites·8 claims
- 4284US7767524B2Method and structure for forming a shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR CORPOR·Filed 2009·Granted Aug 3, 2010·7 cites·8 claims
- 4383US10008579B2MOSFET with integrated schottky diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jun 26, 2018·2 cites·15 claims
- 4483US9136370B2Shielded gate trench MOSFET packageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·5 cites·17 claims
- 4582US8610235B2Trench MOSFET with integrated Schottky barrier diodeCALAFUT DANIEL·Filed 2011·Granted Dec 17, 2013·7 cites·27 claims
- 4678US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 4776US10192982B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jan 29, 2019·1 cites·13 claims
- 4872US9391193B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Jul 12, 2016·1 cites·18 claims
- 4971US7863708B2Power device edge termination having a resistor with one end biased to source voltageFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Jan 4, 2011·3 cites·19 claims
- 5067US9673289B2Dual oxide trench gate power MOSFET using oxide filled trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jun 6, 2017·1 cites·20 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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