Inventor · disambiguated record
Erwan Dornel
Also filed as: DORNEL ERWAN
24 granted patents·8 pending applications·45 citations·filing 2007–2021
93Inventor score
Top patents by PatentIndex Score
32 records- 0189US10923528B2Optoelectronic device comprising pixels with improved contrast and brightnessAledia·Filed 2017·Granted Feb 16, 2021·4 cites·20 claims
- 0285US9854632B2Optoelectronic circuit with low-flicker light-emitting diodesAledia·Filed 2015·Granted Dec 26, 2017·5 cites·20 claims
- 0383US11489088B2Method for manufacturing an optoelectronic device with self-aligning light confinement wallsAledia·Filed 2019·Granted Nov 1, 2022·3 cites·20 claims
- 0482US9960205B2Optoelectronic device comprising light-emitting diodesAledia·Filed 2014·Granted May 1, 2018·5 cites·16 claims
- 0578US10418506B2Light-emitting device with integrated light sensorAledia·Filed 2016·Granted Sep 17, 2019·3 cites·12 claims
- 0676US8735959B2Non-volatile memory device formed by dual floating gate depositIBM·Filed 2013·Granted May 27, 2014·3 cites·9 claims
- 0773US8664059B2Non-volatile memory device formed by dual floating gate depositDORNEL ERWAN·Filed 2012·Granted Mar 4, 2014·3 cites·11 claims
- 0870US10937777B2Opto-electronic device with light-emitting diodesAledia·Filed 2019·Granted Mar 2, 2021·1 cites·12 claims
- 0969US9876142B2Optoelectronic device comprising light-emitting diodesAledia·Filed 2014·Granted Jan 23, 2018·2 cites·23 claims
- 1067US8901654B1Semiconductor-on-insulator (SOI) field effect transistor with buried epitaxial active regionsIBM·Filed 2013·Granted Dec 2, 2014·2 cites·20 claims
- 1166US8236698B2Method for forming non-aligned microcavities of different depthsBARBE JEAN-CHARLES·Filed 2007·Granted Aug 7, 2012·4 cites·8 claims
- 1265US10411161B2Light-emitting device having a built-in light sensorAledia·Filed 2016·Granted Sep 10, 2019·1 cites·12 claims
- 1365US10153399B2Optoelectronic device comprising semiconductor elements and its fabrication processAledia·Filed 2014·Granted Dec 11, 2018·1 cites·22 claims
- 1460US8988940B2Structure and method for narrowing voltage threshold distribution in non-volatile memoriesTANNHOF PASCAL ROBERT·Filed 2012·Granted Mar 24, 2015·4 cites·7 claims
- 1559US8741704B2Metal oxide semiconductor (MOS) device with locally thickened gate oxideDORNEL ERWAN·Filed 2012·Granted Jun 3, 2014·1 cites·20 claims
- 1658US11901482B2Method for manufacturing an optoelectronic device with self-aligning light confinement wallsAledia·Filed 2019·Granted Feb 13, 2024·0 cites·20 claims
- 1758US11769856B2Method for manufacturing an optoelectronic device with self-aligning light confinement wallsAledia·Filed 2019·Granted Sep 26, 2023·0 cites·18 claims
- 1853US9659781B2Method for forming a floating gate in a recess of a shallow trench isolation (STI) regionIBM·Filed 2014·Granted May 23, 2017·0 cites·4 claims
- 1951US2016197064A1Optoelectronic device comprising light-emitting diodesAledia·Filed 2014·Application pending·0 cites
- 2050US8928051B2Metal oxide semiconductor (MOS) device with locally thickened gate oxideIBM·Filed 2013·Granted Jan 6, 2015·0 cites·15 claims
- 2149US2024297155A1Electronic device for capturing or emitting a physical quantity and manufacturing methodAledia·Filed 2021·Application pending·0 cites
- 2249US2025351654A1Optoelectronic device for luminous display and manufacturing methodAledia·Filed 2021·Application pending·0 cites
- 2348US2022416137A1Method for manufacturing a set of light emittersAledia·Filed 2020·Application pending·0 cites
- 2447US7985632B2Method for forming microwires and/or nanowiresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 26, 2011·3 cites·9 claims
- 2547US2023352403A1Method for treating an optoelectronic deviceAledia·Filed 2021·Application pending·0 cites
- 2646US11764196B2Optoelectronic device comprising light-emitting diodesAledia·Filed 2019·Granted Sep 19, 2023·0 cites·19 claims
- 2746US2013285134A1Non-volatile memory device formed with etch stop layer in shallow trench isolation regionDORNEL ERWAN·Filed 2012·Application pending·0 cites
- 2843US11552126B2Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing methodAledia·Filed 2019·Granted Jan 10, 2023·0 cites·27 claims
- 2943US8252636B2Method of manufacturing nanowires parallel to the supporting substrateDORNEL ERWAN·Filed 2008·Granted Aug 28, 2012·0 cites·9 claims
- 3042US11362137B2Optoelectronic device comprising a matrix of three-dimensional diodesAledia·Filed 2018·Granted Jun 14, 2022·0 cites·12 claims
- 3137US2012077327A1Formation of a Shallow Trench Isolation StructureDEGORS NICOLAS·Filed 2011·Application pending·0 cites
- 3235US2011303990A1Semiconductor Device and Method Making SameDORNEL ERWAN·Filed 2011·Application pending·0 cites
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