Inventor · disambiguated record
Harry Hongyue Liu
Also filed as: LIU HARRY · LIU HARRY HONGYUE
62 granted patents·4 pending applications·623 citations·filing 2000–2015
99Inventor score
Top patents by PatentIndex Score
66 records- 0198US7881095B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Feb 1, 2011·70 cites·20 claims
- 0295US7916515B2Non-volatile memory read/write verifySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Mar 29, 2011·44 cites·20 claims
- 0394US8203899B2Memory cell with proportional current self-reference sensingCHEN YIRAN·Filed 2010·Granted Jun 19, 2012·20 cites·20 claims
- 0494US7852665B2Memory cell with proportional current self-reference sensingSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Dec 14, 2010·35 cites·20 claims
- 0593US6424561B1MRAM architecture using offset bits for increased write selectivityMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 23, 2002·56 cites·7 claims
- 0692US8289752B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsLU YONG·Filed 2012·Granted Oct 16, 2012·13 cites·20 claims
- 0792US6392922B1Passivated magneto-resistive bit structure and passivation method thereforMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·59 cites·6 claims
- 0890US7936592B2Non-volatile memory cell with precessional switchingSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 3, 2011·18 cites·20 claims
- 0990US7830693B2NAND based resistive sense memory cell architectureSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 9, 2010·12 cites·20 claims
- 1088US8009458B2Asymmetric write current compensation using gate overdrive for resistive sense memory cellsSEAGATE TECHNOLOGY LLC·Filed 2011·Granted Aug 30, 2011·8 cites·20 claims
- 1187US8040713B2Bit set modes for a resistive sense memory cell arraySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Oct 18, 2011·17 cites·20 claims
- 1287US7881094B2Voltage reference generation for resistive sense memory cellsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Feb 1, 2011·20 cites·20 claims
- 1387US7855923B2Write current compensation using word line boosting circuitrySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Dec 21, 2010·13 cites·20 claims
- 1487US6806546B2Passivated magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 19, 2004·30 cites·3 claims
- 1585US9128821B2Data updating in non-volatile memoryCHEN YIRAN·Filed 2009·Granted Sep 8, 2015·12 cites·5 claims
- 1685US8363442B2NAND based resistive sense memory cell architectureSEAGATE TECHNOLOGY LLC·Filed 2010·Granted Jan 29, 2013·7 cites·20 claims
- 1783US8289759B2Non-volatile memory cell with precessional switchingWANG XIAOBIN·Filed 2011·Granted Oct 16, 2012·4 cites·20 claims
- 1883US7936622B2Defective bit scheme for multi-layer integrated memory deviceSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 3, 2011·14 cites·20 claims
- 1980US8009457B2Write current compensation using word line boosting circuitrySEAGATE TECHNOLOGY LLC·Filed 2010·Granted Aug 30, 2011·5 cites·20 claims
- 2080US6717194B2Magneto-resistive bit structure and method of manufacture thereforMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 6, 2004·18 cites·20 claims
- 2179US7830700B2Resistive sense memory array with partial block update capabilitySEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 9, 2010·9 cites·20 claims
- 2278US8054678B2Stuck-at defect condition repair for a non-volatile memory cellSEAGATE TECHNOLOGY LLC·Filed 2010·Granted Nov 8, 2011·5 cites·20 claims
- 2377US8582347B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2013·Granted Nov 12, 2013·4 cites·20 claims
- 2476US8203893B2Write current compensation using word line boosting circuitryLI HAI·Filed 2011·Granted Jun 19, 2012·4 cites·20 claims
- 2576US8004872B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2008·Granted Aug 23, 2011·7 cites·20 claims
- 2676US7974121B2Write current compensation using word line boosting circuitrySEAGATE TECHNOLOGY LLC·Filed 2010·Granted Jul 5, 2011·4 cites·20 claims
- 2775US8966181B2Memory hierarchy with non-volatile filter and victim cachesCHEN YIRAN·Filed 2008·Granted Feb 24, 2015·7 cites·19 claims
- 2875US8102691B2Magnetic tracks with domain wall storage anchorsXI HAIWEN·Filed 2008·Granted Jan 24, 2012·9 cites·24 claims
- 2973US7948045B2Magnet-assisted transistor devicesSEAGATE TECHNOLOGY LLC·Filed 2008·Granted May 24, 2011·4 cites·10 claims
- 3073US6522574B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 18, 2003·13 cites·11 claims
- 3170US6424564B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·11 cites·13 claims
- 3269US7894250B2Stuck-at defect condition repair for a non-volatile memory cellSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Feb 22, 2011·5 cites·19 claims
- 3369US7830708B1Compensating for variations in memory cell programmed state distributionsSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Nov 9, 2010·6 cites·20 claims
- 3468US8476721B2Magnet-assisted transistor devicesLI YANG·Filed 2011·Granted Jul 2, 2013·2 cites·20 claims
- 3568US7944731B2Resistive sense memory array with partial block update capabilitySEAGATE TECHNOLOGY LLC·Filed 2010·Granted May 17, 2011·3 cites·20 claims
- 3667US6872997B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 29, 2005·8 cites·21 claims
- 3766US8363449B2Floating source line architecture for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2011·Granted Jan 29, 2013·2 cites·23 claims
- 3865US8154914B2Predictive thermal preconditioning and timing control for non-volatile memory cellsCHEN YIRAN·Filed 2011·Granted Apr 10, 2012·2 cites·20 claims
- 3964US7944729B2Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell arraySEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 17, 2011·5 cites·20 claims
- 4062US7916528B2Predictive thermal preconditioning and timing control for non-volatile memory cellsSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Mar 29, 2011·3 cites·20 claims
- 4161US8363450B2Hierarchical cross-point array of non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2011·Granted Jan 29, 2013·2 cites·21 claims
- 4258US8050092B2NAND flash memory with integrated bit line capacitanceSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Nov 1, 2011·3 cites·20 claims
- 4358US7029923B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 18, 2006·4 cites·21 claims
- 4457US6623987B2Passivated magneto-resistive bit structure and passivation method thereforMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 23, 2003·6 cites·16 claims
- 4556US8194437B2Computer memory device with multiple interfacesCHEN YIRAN·Filed 2009·Granted Jun 5, 2012·3 cites·17 claims
- 4655US7965565B2Current cancellation for non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Jun 21, 2011·2 cites·20 claims
- 4754US7969812B2Semiconductor control line address decoding circuitSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Jun 28, 2011·2 cites·20 claims
- 4853US10684778B2Data updating in non-volatile memorySEAGATE TECHNOLOGY LLC·Filed 2015·Granted Jun 16, 2020·0 cites·20 claims
- 4953US8203862B2Voltage reference generation with selectable dummy regionsCHEN YIRAN·Filed 2009·Granted Jun 19, 2012·2 cites·18 claims
- 5052US6791856B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 14, 2004·4 cites·18 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
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