Inventor
SHIN WOONG-CHUL
KR12 patents
⚠️ This page may combine multiple inventors who share the name “SHIN WOONG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS7902048B2Mar 8, 2011
Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer
SAMSUNG ELECTRONICS CO LTD32 citations92
US8003162B2Aug 23, 2011
Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7655940B2Feb 2, 2010
Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US8043952B2Oct 25, 2011
Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7754586B2Jul 13, 2010
Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7668016B2Feb 23, 2010
Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers
SAMSUNG ELECTRONICS CO LTD0 citations51
US7572662B2Aug 11, 2009
Method of fabricating phase change RAM including a fullerene layer
SAMSUNG ELECTRONICS CO LTD1 citations51