Inventor · disambiguated record
Matthew S. Buynoski
Also filed as: BUYNOSKI MATTHEW · BUYNOSKI MATTHEW S · BUYNOSKI MATTHEW STEPHEN
132 granted patents·2 pending applications·5,051 citations·filing 1984–2016
99Inventor score
Files withADVANCED MICRO DEVICES INC114NAT SEMICONDUCTOR CORP6SPANSION LLC6BUYNOSKI MATTHEW2CYPRESS SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
134 records- 0199US6645797B1Method for forming fins in a FinFET device using sacrificial carbon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·273 cites·20 claims
- 0299US6396108B1Self-aligned double gate silicon-on-insulator (SOI) deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·286 cites·9 claims
- 0398US6716684B1Method of making a self-aligned triple gate silicon-on-insulator deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 6, 2004·160 cites·9 claims
- 0498US6709982B1Double spacer FinFET formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 23, 2004·272 cites·17 claims
- 0597US7035141B1Diode array architecture for addressing nanoscale resistive memory arraysSPANSION LLC·Filed 2004·Granted Apr 25, 2006·111 cites·5 claims
- 0697US6765303B1FinFET-based SRAM cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·134 cites·19 claims
- 0797US6465334B1Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·154 cites·18 claims
- 0896US6475874B2Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·137 cites·14 claims
- 0996US6376336B1Frontside SOI gettering with phosphorus dopingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·104 cites·20 claims
- 1095US6716686B1Method for forming channels in a finfet deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 6, 2004·85 cites·20 claims
- 1195US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 1295US6300203B1Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 9, 2001·101 cites·2 claims
- 1395US6087208AMethod for increasing gate capacitance by using both high and low dielectric gate materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·137 cites·9 claims
- 1494US6518167B1Method of forming a metal or metal nitride interface layer between silicon nitride and copperADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 11, 2003·81 cites·20 claims
- 1593US6190985B1Practical way to remove heat from SOI devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 20, 2001·146 cites·16 claims
- 1692US6518113B1Doping of thin amorphous silicon work function control layers of MOS gate electrodesADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·73 cites·17 claims
- 1791US6465309B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·57 cites·14 claims
- 1891US6207553B1Method of forming multiple levels of patterned metallizationADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·126 cites·19 claims
- 1990US6787458B1Polymer memory device formed in via openingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·63 cites·20 claims
- 2090US6753247B1Method(s) facilitating formation of memory cell(s) and patterned conductiveADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·53 cites·26 claims
- 2190US6703307B2Method of implantation after copper seed depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 9, 2004·55 cites·22 claims
- 2289US8049334B1Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2010·Granted Nov 1, 2011·8 cites·20 claims
- 2389US6770905B1Implantation for the formation of CuX layer in an organic memory deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·56 cites·20 claims
- 2489US6602781B1Metal silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 5, 2003·52 cites·27 claims
- 2588US6977389B2Planar polymer memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 20, 2005·51 cites·28 claims
- 2688US6433379B1Tantalum anodization for in-laid copper metallization capacitorADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 13, 2002·43 cites·31 claims
- 2787US6368950B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·41 cites·24 claims
- 2887US6078088ALow dielectric semiconductor device with rigid lined interconnection systemADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 20, 2000·85 cites·22 claims
- 2986US6500743B1Method of copper-polysilicon T-gate formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·36 cites·14 claims
- 3086US6392280B1Metal gate with PVD amorphous silicon layer for CMOS devices and method of making with a replacement gate processADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·38 cites·7 claims
- 3185US7029958B2Self aligned damascene gateADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 18, 2006·31 cites·17 claims
- 3285US6803267B1Silicon containing material for patterning polymeric memory elementADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·41 cites·21 claims
- 3385US6380057B1Enhancement of nickel silicide formation by use of nickel pre-amorphizing implantADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 30, 2002·34 cites·16 claims
- 3484US6583012B1Semiconductor devices utilizing differently composed metal-based in-laid gate electrodesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 24, 2003·33 cites·11 claims
- 3584US6518154B1Method of forming semiconductor devices with differently composed metal-based gate electrodesADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·34 cites·20 claims
- 3683US6436840B1Metal gate with CVD amorphous silicon layer and a barrier layer for CMOS devices and method of making with a replacement gate processADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 20, 2002·31 cites·10 claims
- 3783US6245658B1Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection systemADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 12, 2001·69 cites·17 claims
- 3883US5729045AField effect transistor with higher mobilityADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 17, 1998·60 cites·12 claims
- 3982US6559051B1Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 6, 2003·33 cites·19 claims
- 4082US6495887B1Argon implantation after silicidation for improved floating-body effectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 17, 2002·26 cites·18 claims
- 4182US6100558ASemiconductor device having enhanced gate capacitance by using both high and low dielectric materialsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·43 cites·22 claims
- 4281US6916696B1Method for manufacturing a memory elementADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 12, 2005·23 cites·23 claims
- 4381US6624476B1Semiconductor-on-insulator (SOI) substrate having selective dopant implant in insulator layer and method of fabricatingADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·28 cites·33 claims
- 4481US6528362B1Metal gate with CVD amorphous silicon layer for CMOS devices and method of making with a replacement gate processADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 4, 2003·27 cites·10 claims
- 4581US6492209B1Selectively thin silicon film for creating fully and partially depleted SOI on same waferADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 10, 2002·28 cites·14 claims
- 4681US6246118B1Low dielectric semiconductor device with rigid, conductively lined interconnection systemADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 12, 2001·62 cites·27 claims
- 4781US6225667B1Leaky lower interface for reduction of floating body effect in SOI devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 1, 2001·24 cites·18 claims
- 4881US4761386AMethod of fabricating conductive non-metallic self-passivating non-corrodable IC bonding padsNAT SEMICONDUCTOR CORP·Filed 1986·Granted Aug 2, 1988·56 cites·6 claims
- 4980US4910160AHigh voltage complementary NPN/PNP processNAT SEMICONDUCTOR CORP·Filed 1989·Granted Mar 20, 1990·58 cites·8 claims
- 5079US6852586B1Self assembly of conducting polymer for formation of polymer memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 8, 2005·26 cites·8 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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