Inventor · disambiguated record
Makoto Kitabatake
Also filed as: KITABATAKE MAKOTO
74 granted patents·6 pending applications·2,271 citations·filing 1983–2020
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD48PANASONIC CORP15TOYO TANSO CO4KAZAMA SHUN3NISHIYAMA NORIYOSHI3
Top patents by PatentIndex Score
80 records- 0199US8350549B2Converter with switches having a diode region that is unipolar-conductive only in the reverse directionPANASONIC CORP·Filed 2011·Granted Jan 8, 2013·77 cites·14 claims
- 0297US6400091B1Electron emission element and image output deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 4, 2002·106 cites·30 claims
- 0397US5814194ASubstrate surface treatment methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Sep 29, 1998·134 cites·16 claims
- 0496US7507999B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2003·Granted Mar 24, 2009·133 cites·12 claims
- 0596US6228720B1Method for making insulated-gate semiconductor elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 8, 2001·120 cites·11 claims
- 0695US6995397B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·114 cites·26 claims
- 0795US6110813AMethod for forming an ohmic electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 29, 2000·170 cites·1 claims
- 0895US4877677AWear-protected deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1986·Granted Oct 31, 1989·118 cites·19 claims
- 0994US6692327B1Method for producing electron emitting elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 17, 2004·52 cites·5 claims
- 1094US6306211B1Method for growing semiconductor film and method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 23, 2001·84 cites·14 claims
- 1192US6274889B1Method for forming ohmic electrode, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 14, 2001·109 cites·3 claims
- 1291US6207282B1Substrate surface treatment methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Mar 27, 2001·62 cites·15 claims
- 1390US7671409B2Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependencePANASONIC CORP·Filed 2005·Granted Mar 2, 2010·18 cites·8 claims
- 1489US6989553B2Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 24, 2006·44 cites·9 claims
- 1588US6273950B1SiC device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 14, 2001·39 cites·5 claims
- 1687US6214107B1Method for manufacturing a SiC deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Apr 10, 2001·81 cites·46 claims
- 1786US8885368B2Power converting apparatus suppressing switching noise by controlling switching operationKAZAMA SHUN·Filed 2011·Granted Nov 11, 2014·9 cites·30 claims
- 1886US6617653B1MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 9, 2003·30 cites·28 claims
- 1985US7791308B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Sep 7, 2010·14 cites·11 claims
- 2084US6690035B1Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 10, 2004·30 cites·4 claims
- 2184US6654604B2Equipment for communication systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 25, 2003·28 cites·17 claims
- 2283US7126169B2Semiconductor elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 24, 2006·32 cites·10 claims
- 2382US7473929B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·23 cites·13 claims
- 2482US6323053B1Growth of GaN on Si substrate using GaSe buffer layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 27, 2001·62 cites·16 claims
- 2581US7462540B2Silicon carbide semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 9, 2008·7 cites·9 claims
- 2681US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 2780US8680794B2Load drive system, motor drive system, and vehicle control systemKAZAMA SHUN·Filed 2010·Granted Mar 25, 2014·9 cites·18 claims
- 2880US7521786B2Sustaining circuit with bi-directional devicePANASONIC CORP·Filed 2005·Granted Apr 21, 2009·8 cites·3 claims
- 2979US6270573B1Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 7, 2001·42 cites·40 claims
- 3078US6645402B1Electron emitting device, electron emitting source, image display, and method for producing themMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 11, 2003·30 cites·41 claims
- 3177US8497648B2Synchronous electric motor drive systemTAGOME MASAKI·Filed 2009·Granted Jul 30, 2013·11 cites·45 claims
- 3277US7230273B2Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 12, 2007·24 cites·9 claims
- 3377US6864507B2MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 8, 2005·17 cites·30 claims
- 3477US6674131B2Semiconductor power device for high-temperature applicationsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 6, 2004·23 cites·4 claims
- 3576US6577386B2Method and apparatus for activating semiconductor impuritiesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 10, 2003·16 cites·2 claims
- 3675US6580125B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·18 cites·8 claims
- 3774US8896178B2Synchronous electric motor drive system having slit windingsNISHIYAMA NORIYOSHI·Filed 2011·Granted Nov 25, 2014·3 cites·20 claims
- 3873US8363440B2Power conversion circuit having off-voltage control circuitPANASONIC CORP·Filed 2009·Granted Jan 29, 2013·10 cites·30 claims
- 3973US6940110B2SiC-MISFET and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·18 cites·10 claims
- 4073US6008502ADiamond electron emitting device having an insulative electron supply layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Dec 28, 1999·28 cites·41 claims
- 4172US7381993B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Jun 3, 2008·4 cites·14 claims
- 4270US6600203B2Semiconductor device with silicon carbide suppression layer for preventing extension of micropipeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 29, 2003·12 cites·3 claims
- 4369US8390165B2Synchronous motor drive systemNISHIYAMA NORIYOSHI·Filed 2009·Granted Mar 5, 2013·5 cites·15 claims
- 4469US7217954B2Silicon carbide semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 15, 2007·11 cites·14 claims
- 4569US6940127B2Equipment for communication system and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·12 cites·7 claims
- 4668US7964911B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Jun 21, 2011·4 cites·13 claims
- 4768US7436031B2Device for implementing an inverter having a reduced sizeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·14 claims
- 4868US6350999B1Electron-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Feb 26, 2002·20 cites·10 claims
- 4968US4844785AMethod for deposition of hard carbon filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Jul 4, 1989·34 cites·6 claims
- 5067US7751215B2Semiconductor device and electric apparatus having a semiconductor layer divided into a plurality of square subregionsPANASONIC CORP·Filed 2006·Granted Jul 6, 2010·3 cites·10 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →