Inventor · disambiguated record
Ichiro Imaizumi
Also filed as: IMAIZUMI ICHIRO
17 granted patents·311 citations·filing 1974–2001
94Inventor score
Top patents by PatentIndex Score
17 records- 0197US5281865AFlip-flop circuitHITACHI LTD·Filed 1991·Granted Jan 25, 1994·155 cites·30 claims
- 0282US6707844B1Synchronous circuit and receiverKOKUSAI ELECTRIC CO LTD·Filed 2000·Granted Mar 16, 2004·27 cites·11 claims
- 0370US6647056B1Correlation circuit for spread spectrum communication, demodulation circuit and reception apparatusKOKUSAI ELECTRIC CO LTD·Filed 2000·Granted Nov 11, 2003·14 cites·2 claims
- 0467US6636557B2Despreading circuitKOKUSAI ELECTRIC CO LTD·Filed 2001·Granted Oct 21, 2003·8 cites·4 claims
- 0563US4278987AJunction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientationsHITACHI LTD·Filed 1978·Granted Jul 14, 1981·17 cites·7 claims
- 0662US6891885B2Correlation circuit for spread spectrum communicationHITACHI INT ELECTRIC INC·Filed 2001·Granted May 10, 2005·7 cites·19 claims
- 0759US4362599AMethod for making semiconductor deviceHITACHI LTD·Filed 1981·Granted Dec 7, 1982·19 cites·10 claims
- 0858US4423433AHigh-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodesHITACHI LTD·Filed 1980·Granted Dec 27, 1983·15 cites·11 claims
- 0957US6678313B1Correlation circuit for spread spectrum communicationKOKUSAI ELECTRIC CO LTD·Filed 1999·Granted Jan 13, 2004·26 cites·23 claims
- 1052US6928103B2Rach receiving apparatusHITACHI INT ELECTRIC INC·Filed 2001·Granted Aug 9, 2005·2 cites·9 claims
- 1142US3959812AHigh-voltage semiconductor integrated circuitHITACHI LTD·Filed 1974·Granted May 25, 1976·5 cites·6 claims
- 1238US3978369ASolid state starter apparatus for a discharge lampHITACHI LTD·Filed 1975·Granted Aug 31, 1976·6 cites·16 claims
- 1334US4933737APolysilon contacts to IC mesasHITACHI LTD·Filed 1987·Granted Jun 12, 1990·5 cites·7 claims
- 1432US6301292B1Despreading circuitKOKUSAI ELECTRIC CO LTD·Filed 1999·Granted Oct 9, 2001·2 cites·10 claims
- 1531US4443812AHigh-breakdown-voltage semiconductor deviceHITACHI LTD·Filed 1981·Granted Apr 17, 1984·2 cites·4 claims
- 1630US5019523AProcess for making polysilicon contacts to IC mesasHITACHI LTD·Filed 1990·Granted May 28, 1991·0 cites·24 claims
- 1730US3977920AMethod of fabricating semiconductor device using at least two sorts of insulating films different from each otherHITACHI LTD·Filed 1974·Granted Aug 31, 1976·1 cites·7 claims
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